公开(公告)号：US09419035B2

公开(公告)日：2016-08-16

申请号：US13344312

申请日：2012-01-05

Applicant: Fei Wu ,  Hongjun Li ,  Yin Qian ,  Hsin-Chih Tai ,  Howard E. Rhodes ,  Jizhang Shan

Inventor： Fei Wu ,  Hongjun Li ,  Yin Qian ,  Hsin-Chih Tai ,  Howard E. Rhodes ,  Jizhang Shan

IPC: H01L27/146 ,  G02B3/00

CPC classification number: H01L27/14627 ,  G02B3/0018 ,  H01L27/1464 ,  H01L27/14685

Abstract: An example image sensor includes first, second, and third micro-lenses. The first micro-lens is in a first color pixel and has a first curvature and a first height. The second micro-lens is in a second color pixel and has a second curvature and a second height. The third micro-lens is in a third color pixel and has a third curvature and a third height. The first curvature is the same as both the second curvature and the third curvature and the first height is greater than the second height and the second height is greater than the third height, such that light absorption depths for the first, second, and third color pixels are the same.

Abstract translation: 示例性图像传感器包括第一，第二和第三微透镜。 第一微透镜是第一颜色像素并且具有第一曲率和第一高度。 第二微透镜处于第二颜色像素中并且具有第二曲率和第二高度。 第三微透镜是第三色像素，具有第三曲率和第三高度。 第一曲率与第二曲率和第三曲率都相同，第一高度大于第二高度，第二高度大于第三高度，使得第一，第二和第三颜色的光吸收深度 像素是相同的。

公开(公告)号：US20140048897A1

公开(公告)日：2014-02-20

申请号：US13587811

申请日：2012-08-16

Applicant: Yin Qian ,  Hsin-Chih Tai ,  Gang Chen ,  Duli Mao ,  Vincent Venezia ,  Howard E. Rhodes

Inventor： Yin Qian ,  Hsin-Chih Tai ,  Gang Chen ,  Duli Mao ,  Vincent Venezia ,  Howard E. Rhodes

IPC: H01L31/02 ,  H01L31/18

CPC classification number: H01L27/1463 ,  H01L27/14689

Abstract: Embodiments of a pixel including a substrate having a front surface and a photosensitive region formed in or near the front surface of the substrate. An isolation trench is formed in the front surface of the substrate adjacent to the photosensitive region. The isolation trench includes a trench having a bottom and sidewalls, a passivation layer formed on the bottom and the sidewalls, and a filler to fill the portion of the trench not filled by the passivation layer.

Abstract translation: 包括具有形成在基板的表面中或附近的前表面和感光区域的基板的像素的实施例。 在与感光区域相邻的基板的前表面中形成隔离沟槽。 隔离沟槽包括具有底部和侧壁的沟槽，形成在底部和侧壁上的钝化层，以及用于填充未被钝化层填充的沟槽部分的填料。

公开(公告)号：US20130264688A1

公开(公告)日：2013-10-10

申请号：US13441627

申请日：2012-04-06

Applicant: Yin Qian ,  Hsin-Chih Tai ,  Duli Mao ,  Tiejun Dai ,  Howard E. Rhodes ,  Hongli Yang

Inventor： Yin Qian ,  Hsin-Chih Tai ,  Duli Mao ,  Tiejun Dai ,  Howard E. Rhodes ,  Hongli Yang

IPC: H01L29/06 ,  H01L21/28

CPC classification number: H01L24/80 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/92 ,  H01L24/94 ,  H01L25/0657 ,  H01L27/14634 ,  H01L2224/04042 ,  H01L2224/05567 ,  H01L2224/05571 ,  H01L2224/08145 ,  H01L2224/2401 ,  H01L2224/24105 ,  H01L2224/24147 ,  H01L2224/48151 ,  H01L2224/73251 ,  H01L2224/80357 ,  H01L2224/80896 ,  H01L2224/80986 ,  H01L2224/82031 ,  H01L2224/82106 ,  H01L2224/9202 ,  H01L2224/94 ,  H01L2225/06544 ,  H01L2924/00014 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/3511 ,  H01L2224/80001 ,  H01L2924/00012 ,  H01L2224/05552

Abstract: An integrated circuit system includes a first device wafer that has a first semiconductor layer proximate to a first metal layer including a first conductor disposed within a first metal layer oxide. A second device wafer that has a second semiconductor layer proximate to a second metal layer including a second conductor disposed within a second metal layer oxide is also included. A frontside of the first metal layer oxide is bonded to a frontside of the second metal layer oxide at an oxide bonding interface between the first metal layer oxide and the second metal layer oxide. A conductive path couples the first conductor to the second conductor with conductive material formed in a cavity etched between the first conductor and the second conductor and etched through the oxide bonding interface and through the second semiconductor layer from a backside of the second device wafer.

Abstract translation: 集成电路系统包括具有靠近第一金属层的第一半导体层的第一器件晶片，第一金属层包括设置在第一金属层氧化物内的第一导体。 还包括具有靠近第二金属层的第二半导体层的第二器件晶片，该第二金属层包括设置在第二金属层氧化物内的第二导体。 在第一金属层氧化物和第二金属层氧化物之间的氧化物接合界面处，第一金属层氧化物的前侧结合到第二金属层氧化物的前侧。 导电路径将第一导体耦合到第二导体，导电材料形成在蚀刻在第一导体和第二导体之间的空腔中，并通过氧化物接合界面从第二器件晶片的背面蚀刻穿过第二半导体层。

公开(公告)号：US20130113065A1

公开(公告)日：2013-05-09

申请号：US13288731

申请日：2011-11-03

Applicant: Yin Qian ,  Hsin-Chih Tai ,  Keh-Chiang Ku ,  Vincent Venezia ,  Duli Mao ,  Wei Zheng ,  Howard E. Rhodes

Inventor： Yin Qian ,  Hsin-Chih Tai ,  Keh-Chiang Ku ,  Vincent Venezia ,  Duli Mao ,  Wei Zheng ,  Howard E. Rhodes

IPC: H01L31/0216 ,  H01L21/768 ,  H01L31/02

CPC classification number: H01L23/481 ,  H01L21/6835 ,  H01L23/522 ,  H01L24/05 ,  H01L27/14636 ,  H01L27/1464 ,  H01L2221/6835 ,  H01L2224/05548 ,  H01L2224/05553 ,  H01L2224/05567 ,  H01L2924/00014 ,  H01L2924/12043 ,  H01L2224/05552 ,  H01L2924/00

Abstract: Embodiments of a semiconductor device that includes a semiconductor substrate and a cavity disposed in the semiconductor substrate that extends at least from a first side of the semiconductor substrate to a second side of the semiconductor substrate. The semiconductor device also includes an insulation layer disposed over the first side of the semiconductor substrate and coating sidewalls of the cavity. A conductive layer including a bonding pad is disposed over the insulation layer. The conductive layer extends into the cavity and connects to a metal stack disposed below the second side of the semiconductor substrate. A through silicon via pad is disposed below the second side of the semiconductor substrate and connected to the metal stack. The through silicon via pad is position to accept a through silicon via.

Abstract translation: 半导体器件的实施例包括半导体衬底和设置在半导体衬底中的至少从半导体衬底的第一侧至半导体衬底的第二侧延伸的空腔。 半导体器件还包括设置在半导体衬底的第一侧上并涂覆空腔的侧壁的绝缘层。 包括接合焊盘的导电层设置在绝缘层上。 导电层延伸到空腔中并且连接到设置在半导体衬底的第二侧下方的金属叠层。 贯穿硅通孔焊盘设置在半导体衬底的第二侧下方并连接到金属堆叠。 贯穿硅通孔焊盘的位置是接受硅通孔。

公开(公告)号：US08345132B2

公开(公告)日：2013-01-01

申请号：US12842808

申请日：2010-07-23

Applicant: Hsin-Chih Tai ,  Yin Qian ,  Duli Mao ,  Vincent Venezia

Inventor： Hsin-Chih Tai ,  Yin Qian ,  Duli Mao ,  Vincent Venezia

IPC: H04N3/14 ,  H04N5/335 ,  H04N9/04 ,  H04N9/083

CPC classification number: H04N9/045 ,  H01L27/14621 ,  H01L27/14643

Abstract: A color image sensor is disclosed. The color image sensor includes a pixel array including a color filter array (“CFA”) overlaying an array of photo-sensors for acquiring a color image. The CFA includes first color filter elements of a first color overlaying a first group of the photo-sensors and second color filter elements of a second color overlaying a second group of the photo-sensors. The first color filter elements contribute to a first color channel of the color image and the second color filter elements contribute to a second color channel of the color image. The color image sensor further includes a color combiner unit coupled to combine the first color channel with the second color channel to generate a third color channel of the color image based on the first and second color channels. An output port is coupled to the pixel array to output the color image having three color channels including the first, second, and third color channels.

Abstract translation: 公开了彩色图像传感器。 彩色图像传感器包括像素阵列，其包括覆盖用于获取彩色图像的光电传感器阵列的滤色器阵列（CFA）。 CFA包括覆盖第一组光传感器的第一颜色的第一滤色器元件和覆盖第二组光传感器的第二颜色的第二滤色器元件。 第一滤色器元件有助于彩色图像的第一颜色通道，并且第二滤色器元件有助于彩色图像的第二颜色通道。 彩色图像传感器还包括颜色组合器单元，其耦合以组合第一颜色通道和第二颜色通道，以基于第一和第二颜色通道生成彩色图像的第三颜色通道。 输出端口耦合到像素阵列以输出具有包括第一，第二和第三颜色通道的三个颜色通道的彩色图像。

公开(公告)号：US20120175722A1

公开(公告)日：2012-07-12

申请号：US12986032

申请日：2011-01-06

Applicant: Hsin-Chih Tai ,  Vincent Venezia ,  Yin Qian ,  Duli Mao ,  Keh-Chiang Ku

Inventor： Hsin-Chih Tai ,  Vincent Venezia ,  Yin Qian ,  Duli Mao ,  Keh-Chiang Ku

IPC: H01L27/146 ,  H01L31/18

CPC classification number: H01L27/14643 ,  H01L27/14636 ,  H01L27/1464

Abstract: A backside illuminated imaging sensor with a seal ring support includes an epitaxial layer having an imaging array formed in a front side of the epitaxial layer. A metal stack is coupled to the front side of the epitaxial layer, wherein the metal stack includes a seal ring formed in an edge region of the imaging sensor. An opening is included that extends from the back side of the epitaxial layer to a metal pad of the seal ring to expose the metal pad. The seal ring support is disposed on the metal pad and within the opening to structurally support the seal ring.

Abstract translation: 具有密封环支撑件的背面照明成像传感器包括具有形成在外延层的前侧的成像阵列的外延层。 金属叠层耦合到外延层的前侧，其中金属堆叠包括形成在成像传感器的边缘区域中的密封环。 包括从外延层的背面延伸到密封环的金属焊盘以露出金属焊盘的开口。 密封环支撑件设置在金属垫上并且在开口内，以在结构上支撑密封环。

公开(公告)号：US20120018620A1

公开(公告)日：2012-01-26

申请号：US13250237

申请日：2011-09-30

Applicant: Yin Qian ,  Hsin-Chih Tai ,  Duli Mao ,  Vincent Venezia ,  Howard E. Rhodes

Inventor： Yin Qian ,  Hsin-Chih Tai ,  Duli Mao ,  Vincent Venezia ,  Howard E. Rhodes

IPC: H01L27/146 ,  H01L31/0232

CPC classification number: H01L27/14647 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464

Abstract: A backside illuminated imaging sensor includes a vertical stacked sensor that reduces cross talk by using different silicon layers to form photodiodes at separate levels within a stack (or separate stacks) to detect different colors. Blue light-, green light-, and red light-detection silicon layers are formed, with the blue light detection layer positioned closest to the backside of the sensor and the red light detection layer positioned farthest from the backside of the sensor. An anti-reflective coating (ARC) layer can be inserted in between the red and green light detection layers to reduce the optical cross talk captured by the red light detection layer. Amorphous polysilicon can be used to form the red light detection layer to boost the efficiency of detecting red light.

Abstract translation: 背面照明成像传感器包括垂直堆叠传感器，其通过使用不同的硅层在堆叠（或单独的堆叠）内的不同级别形成光电二极管来减少串扰，以检测不同的颜色。 形成蓝光，绿光和红光检测硅层，蓝光检测层位于最靠近传感器背面的位置，红光检测层位于离传感器背面最远的位置。 可以在红色和绿色光检测层之间插入抗反射涂层（ARC）层，以减少由红光检测层捕获的光学交叉对话。 可以使用非晶多晶硅来形成红光检测层，以提高检测红光的效率。

公开(公告)号：US07948018B2

公开(公告)日：2011-05-24

申请号：US12109134

申请日：2008-04-24

Applicant: Vincent Venezia ,  Hidetoshi Nozaki ,  Duli Mao ,  Yin Qian ,  Hsin-Chih Tai ,  Howard E. Rhodes

Inventor： Vincent Venezia ,  Hidetoshi Nozaki ,  Duli Mao ,  Yin Qian ,  Hsin-Chih Tai ,  Howard E. Rhodes

IPC: H01L31/062

CPC classification number: H01L27/1463 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14627 ,  H01L27/14632 ,  H01L31/035281

Abstract: An image sensor pixel includes a substrate, an epitaxial layer, and a light collection region. The substrate is doped to have a first conductivity type. The epitaxial layer is disposed over the substrate and doped to have a second conductivity type opposite of the first conductivity type. The light collection region is disposed within the epitaxial layer for collecting photo-generated charge carriers. The light collection region is doped to have the first conductivity type as well.

Abstract translation: 图像传感器像素包括基板，外延层和光收集区域。 衬底被掺杂以具有第一导电类型。 外延层设置在衬底上并掺杂以具有与第一导电类型相反的第二导电类型。 光收集区域设置在用于收集光生电荷载流子的外延层内。 光收集区域也被掺杂以具有第一导电类型。

公开(公告)号：US20110115002A1

公开(公告)日：2011-05-19

申请号：US12620437

申请日：2009-11-17

Applicant: Hsin-Chih Tai ,  Howard E. Rhodes ,  Duli Mao ,  Vincent Venezia ,  Yin Qian

Inventor： Hsin-Chih Tai ,  Howard E. Rhodes ,  Duli Mao ,  Vincent Venezia ,  Yin Qian

IPC: H01L31/14 ,  H01L31/18

CPC classification number: H01L24/05 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14683 ,  H01L2224/02165 ,  H01L2224/04042 ,  H01L2224/05093 ,  H01L2224/05096 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05684 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327

Abstract: A backside illuminated imaging sensor with reinforced pad structure includes a device layer, a metal stack, an opening and a frame. The device layer has an imaging array formed in a front side of the device layer and the imaging array is adapted to receive light from a back side of the device layer. The metal stack is coupled to the front side of the device layer where the metal stack includes at least one metal interconnect layer having a metal pad. The opening extends from the back side of the device layer to the metal pad to expose the metal pad for wire bonding. The frame is disposed within the opening to structurally reinforce the metal pad.

Abstract translation: 具有加强垫结构的背面照明成像传感器包括器件层，金属叠层，开口和框架。 器件层具有形成在器件层的前侧的成像阵列，并且成像阵列适于从器件层的背面接收光。 金属叠层耦合到器件层的前侧，其中金属堆叠包括具有金属焊盘的至少一个金属互连层。 开口从器件层的背面延伸到金属焊盘，露出用于引线接合的金属焊盘。 框架设置在开口内以在结构上加强金属垫。

公开(公告)号：US20110085067A1

公开(公告)日：2011-04-14

申请号：US12967759

申请日：2010-12-14

Applicant: Vincent Venezia ,  Ashish Shah ,  Rongsheng Yang ,  Duli Mao ,  Yin Qian ,  Hsin-Chih Tai ,  Howard E. Rhodes

Inventor： Vincent Venezia ,  Ashish Shah ,  Rongsheng Yang ,  Duli Mao ,  Yin Qian ,  Hsin-Chih Tai ,  Howard E. Rhodes

IPC: H04N5/335

CPC classification number: H01L27/1463 ,  H01L27/14601

Abstract: An image sensor pixel includes a substrate, a first epitaxial layer, a collector layer, a second epitaxial layer and a light collection region. The substrate is doped to have a first conductivity type. The first epitaxial layer is disposed over the substrate and doped to have the first conductivity type as well. The collector layer is selectively disposed over at least a portion of the first epitaxial layer and doped to have a second conductivity type. The second epitaxial layer is disposed over the collector layer and doped to have the first conductivity type. The light collection region collects photo-generated charge carriers and is disposed within the second epitaxial layer. The light collection region is also doped to have the second conductivity type.

Abstract translation: 图像传感器像素包括基板，第一外延层，集电极层，第二外延层和光收集区域。 衬底被掺杂以具有第一导电类型。 第一外延层设置在衬底上并掺杂以具有第一导电类型。 集电极层选择性地设置在第一外延层的至少一部分上并被掺杂以具有第二导电类型。 第二外延层设置在集电极层上并掺杂以具有第一导电类型。 光收集区域收集光生电荷载流子并且设置在第二外延层内。 光收集区域也被掺杂以具有第二导电类型。