发明申请
US20110095287A1 Nonvolatile memory device and nonvolatile memory array including the same 有权
非易失性存储器件和包括其的非易失性存储器阵列

Nonvolatile memory device and nonvolatile memory array including the same
摘要:
A nonvolatile memory device having self-presence diode characteristics, and/or a nonvolatile memory array including the nonvolatile memory device may be provided. The nonvolatile memory device may include a lower electrode, a first semiconductor oxide layer on the lower electrode, a second semiconductor oxide layer on the first semiconductor oxide layer, and/or an upper electrode on the second semiconductor oxide layer.
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