发明申请
US20110095287A1 Nonvolatile memory device and nonvolatile memory array including the same
有权
非易失性存储器件和包括其的非易失性存储器阵列
- 专利标题: Nonvolatile memory device and nonvolatile memory array including the same
- 专利标题(中): 非易失性存储器件和包括其的非易失性存储器阵列
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申请号: US12929121申请日: 2011-01-03
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公开(公告)号: US20110095287A1公开(公告)日: 2011-04-28
- 发明人: Myoung-Jae Lee , In-Kyeong Yoo , Eun-Hong Lee , Jong-Wan Kim , Dong-Chul Kim , Seung-Eon Ahn
- 申请人: Myoung-Jae Lee , In-Kyeong Yoo , Eun-Hong Lee , Jong-Wan Kim , Dong-Chul Kim , Seung-Eon Ahn
- 优先权: KR10-2006-0019915 20060302
- 主分类号: H01L29/12
- IPC分类号: H01L29/12
摘要:
A nonvolatile memory device having self-presence diode characteristics, and/or a nonvolatile memory array including the nonvolatile memory device may be provided. The nonvolatile memory device may include a lower electrode, a first semiconductor oxide layer on the lower electrode, a second semiconductor oxide layer on the first semiconductor oxide layer, and/or an upper electrode on the second semiconductor oxide layer.
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