发明申请
- 专利标题： HIGH-DRIVE CURRENT MOSFET
- 专利标题（中）： 高驱动电流MOSFET
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申请号： US12607116申请日： 2009-10-28
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公开(公告)号： US20110095333A1公开(公告)日： 2011-04-28
- 发明人: Jae-Eun Park , Xinlin Wang , Xiangdong Chen
- 申请人： Jae-Eun Park , Xinlin Wang , Xiangdong Chen
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L29/739
- IPC分类号： H01L29/739 ; H01L21/331
摘要：
A method of forming a semiconductor device having an asymmetrical source and drain. In one embodiment, the method includes forming a gate structure on a first portion of the substrate having a well of a first conductivity. A source region of a second conductivity and drain region of the second conductivity is formed within the well of the first conductivity in a portion of the substrate that is adjacent to the first portion of the substrate on which the gate structure is present. A doped region of a second conductivity is formed within the drain region to provide an integrated bipolar transistor on a drain side of the semiconductor device, in which a collector is provided by the well of the first conductivity, the base is provided by the drain region of the second conductivity and the emitter is provided by the doped region of the second conductivity that is present in the drain region. A semiconductor device formed by the above-described method is also provided.
公开/授权文献
- US08120058B2 High-drive current MOSFET 公开/授权日：2012-02-21
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