发明申请
- 专利标题: SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME
- 专利标题(中): 半导体器件及其制造方法
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申请号: US12980399申请日: 2010-12-29
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公开(公告)号: US20110095351A1公开(公告)日: 2011-04-28
- 发明人: Sang-Hun Jeon , Jung-Dal Choi , Chang-Seok Kang , Won-Seok Jung
- 申请人: Sang-Hun Jeon , Jung-Dal Choi , Chang-Seok Kang , Won-Seok Jung
- 申请人地址: KR Suwon-si
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Suwon-si
- 优先权: KR2006-102566 20061020
- 主分类号: H01L29/788
- IPC分类号: H01L29/788
摘要:
A semiconductor device includes a device isolation layer in a semiconductor substrate, an active region defined by the device isolation layer, the active region including a main surface and a recess region including a bottom surface that is lower than the main surface, and a gate electrode formed over the recess region, wherein a top surface of the device isolation layer adjacent to the recess region is lower than the bottom surface of the recess region.