公开(公告)号：US09024592B2

公开(公告)日：2015-05-05

申请号：US13431474

申请日：2012-03-27

申请人： Sang-hun Jeon ,  Ho-jun Shim

发明人： Sang-hun Jeon ,  Ho-jun Shim

IPC分类号： H02J7/00 ,  G06F1/26 ,  G06F1/30 ,  H02J7/34

CPC分类号： G06F1/263 ,  G06F1/30 ,  H02J7/345

摘要： Auxiliary power supplies include a capacitor (e.g., super capacitor) and a capacitor charging circuit, which is configured to provide a charging current to a first terminal of the capacitor. Enhanced failure detection is provided by a capacitor monitoring circuit, which may be electrically coupled to at least one terminal of the capacitor. The capacitor monitoring circuit is configured to detect when the capacitor is malfunctioning in an open condition as well as when the capacitor is malfunctioning in a short condition.

摘要翻译： 辅助电源包括电容器（例如超级电容器）和电容器充电电路，其被配置为向电容器的第一端子提供充电电流。 增强的故障检测由电容器监控电路提供，其可以电耦合到电容器的至少一个端子。 电容器监视电路被配置为检测电容器何时在打开状态下发生故障，以及当电容器在短时间内发生故障时。

公开(公告)号：US08975568B2

公开(公告)日：2015-03-10

申请号：US12805723

申请日：2010-08-17

申请人： Ho-jung Kim ,  U-in Chung ,  Jai-kwang Shin ,  Sun-il Kim ,  I-hun Song ,  Chang-jung Kim ,  Sang-hun Jeon

发明人： Ho-jung Kim ,  U-in Chung ,  Jai-kwang Shin ,  Sun-il Kim ,  I-hun Song ,  Chang-jung Kim ,  Sang-hun Jeon

IPC分类号： H01J27/00 ,  H04N9/04 ,  H04N5/3745 ,  H01L27/146

摘要： Image sensors and methods of operating the same. An image sensor includes a pixel array including a plurality of pixels. Each of the plurality of pixels includes a photo sensor, the voltage-current characteristics of which vary according to energy of incident light, and that generates a sense current determined by the energy of the incident light; a reset unit that is activated to generate a reference current, according to a reset signal for resetting at least one of the plurality of pixels; and a conversion unit that converts the sense current and the reference current into a sense voltage and a reference voltage, respectively.

公开(公告)号：US08698246B2

公开(公告)日：2014-04-15

申请号：US13547200

申请日：2012-07-12

申请人： Sang-hun Jeon ,  Chang-jung Kim ,  I-hun Song

发明人： Sang-hun Jeon ,  Chang-jung Kim ,  I-hun Song

IPC分类号： H01L29/10 ,  H01L29/15 ,  H01L29/80 ,  H01L27/12 ,  H01L23/62 ,  H01L21/00 ,  H01L21/84 ,  H01L21/337

CPC分类号： H01L29/42384 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

摘要： A high-voltage oxide transistor includes a substrate; a channel layer disposed on the substrate; a gate electrode disposed on the substrate to correspond to the channel layer; a source contacting a first side of the channel layer; and a drain contacting a second side of the channel layer, wherein the channel layer includes a plurality of oxide layers, and none of the plurality of oxide layers include silicon. The gate electrode may be disposed on or under the channel layer. Otherwise, the gate electrodes may be disposed respectively on and under the channel layer.

摘要翻译： 高压氧化物晶体管包括基板; 设置在所述基板上的沟道层; 设置在所述基板上以对应于所述沟道层的栅电极; 源极，与所述沟道层的第一侧接触; 以及与沟道层的第二面接触的漏极，其中所述沟道层包括多个氧化物层，并且所述多个氧化物层中没有一个包括硅。 栅电极可以设置在沟道层上或下面。 否则，栅极电极可以分别设置在沟道层上和下面。

公开(公告)号：US08399882B2

公开(公告)日：2013-03-19

申请号：US12801500

申请日：2010-06-11

申请人： Sang-hun Jeon ,  I-hun Song ,  Chang-jung Kim ,  Sung-ho Park

发明人： Sang-hun Jeon ,  I-hun Song ,  Chang-jung Kim ,  Sung-ho Park

IPC分类号： H01L29/12

CPC分类号： H01L29/7869

摘要： Transistors and methods of manufacturing the same. A transistor may be an oxide thin film transistor (TFT) with a self-aligned top gate structure. The transistor may include a gate insulating layer between a channel region and a gate electrode that extends from two sides of the gate electrode. The gate insulating layer may cover at least a portion of source and drain regions.

摘要翻译： 晶体管及其制造方法。 晶体管可以是具有自对准顶栅结构的氧化物薄膜晶体管（TFT）。 晶体管可以包括从栅电极的两侧延伸的沟道区和栅电极之间的栅极绝缘层。 栅绝缘层可以覆盖源区和漏区的至少一部分。

公开(公告)号：US20120327032A1

公开(公告)日：2012-12-27

申请号：US13435666

申请日：2012-03-30

申请人： Sang-hun JEON ,  I-hun SONG ,  Seung-eon AHN ,  Chang-jung KIM ,  Young KIM

发明人： Sang-hun JEON ,  I-hun SONG ,  Seung-eon AHN ,  Chang-jung KIM ,  Young KIM

IPC分类号： G06F3/042 ,  H01L31/113 ,  H01L31/0264

CPC分类号： H01L27/14609 ,  G06F3/042 ,  G06F2203/04103

摘要： Light-sensing apparatuses may include a light sensor transistor and a switching transistor in a light-sensing pixel, the transistors being oxide semiconductor transistors. In the light-sensing apparatus, the light sensor transistor and the switching transistor in the light-sensing pixel may be adjacently formed on one substrate, the switching transistor including a channel material that is relatively less light-sensitive than the light sensor transistor and is stable, and the light sensor transistor includes a channel material that is relatively light-sensitive. The light sensor transistor may include a transparent upper electrode on a surface of a channel, and a negative voltage may be applied to the transparent upper electrode, whereby a threshold voltage shift in a negative voltage direction may be prevented or reduced.

摘要翻译： 光感测装置可以包括光感测像素中的光传感器晶体管和开关晶体管，该晶体管是氧化物半导体晶体管。 在感光装置中，光感测像素中的光传感器晶体管和开关晶体管可以相邻地形成在一个衬底上，该开关晶体管包括与光传感器晶体管相比较不光敏的沟道材料，并且是 并且光传感器晶体管包括相对光敏的通道材料。 光传感器晶体管可以在通道的表面上包括透明上电极，并且可以向透明上电极施加负电压，由此可以防止或减小负电压方向上的阈值电压偏移。

公开(公告)号：US08227303B2

公开(公告)日：2012-07-24

申请号：US13173670

申请日：2011-06-30

申请人： Sang-Hun Jeon ,  Moon-Sook Lee ,  Byeong-Ok Cho

发明人： Sang-Hun Jeon ,  Moon-Sook Lee ,  Byeong-Ok Cho

IPC分类号： H01L21/336

CPC分类号： H01L27/124 ,  B82Y10/00 ,  H01L27/095 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/1251 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/45 ,  H01L29/7839 ,  H01L29/78681 ,  H01L29/7869

摘要： A method of manufacturing a CMOS transistor can be provided by forming first and second gate electrodes on a substrate and forming a gate insulation layer on the first and second gate electrodes. A semiconductor channel material having a first conductivity type can be formed on the gate insulation layer. A pair of ohmic contacts can be formed on the semiconductor channel material such that the ohmic contacts cross over both side portions of the first gate electrode, respectively. A pair of Schottky contacts can be formed on the semiconductor channel material such that the Schottky contacts cross over both side portions of the second gate electrode, respectively.

摘要翻译： 可以通过在衬底上形成第一和第二栅电极并在第一和第二栅电极上形成栅极绝缘层来提供制造CMOS晶体管的方法。 可以在栅极绝缘层上形成具有第一导电类型的半导体沟道材料。 可以在半导体沟道材料上形成一对欧姆接触，使得欧姆接触分别跨过第一栅电极的两侧部分。 可以在半导体沟道材料上形成一对肖特基触点，使得肖特基触点分别跨过第二栅电极的两侧部分。

公开(公告)号：US08217445B2

公开(公告)日：2012-07-10

申请号：US10864499

申请日：2004-06-10

申请人： Sang-hun Jeon ,  Soo-doo Chae ,  Ju-hyung Kim ,  Chung-woo Kim

发明人： Sang-hun Jeon ,  Soo-doo Chae ,  Ju-hyung Kim ,  Chung-woo Kim

IPC分类号： H01L29/792

CPC分类号： H01L21/28282

摘要： A SONOS memory device, and a method of manufacturing the same, includes a substrate and a multifunctional device formed on the substrate. The multifunctional device performs both switching and data storing functions. The multifunctional device includes first and second impurities areas, a channel formed between the first and second impurities areas, and a stacked material formed on the channel for data storage. The stacked material for data storage is formed by sequentially stacking a tunneling oxide layer, a memory node layer in which data is stored, a blocking layer, and an electrode layer.

摘要翻译： SONOS存储器件及其制造方法包括形成在衬底上的衬底和多功能器件。 多功能设备执行切换和数据存储功能。 多功能装置包括第一和第二杂质区域，形成在第一和第二杂质区域之间的通道，以及形成在通道上用于数据存储的堆叠材料。 用于数据存储的层叠材料通过依次层叠隧道氧化物层，存储数据的存储节点层，阻挡层和电极层而形成。

公开(公告)号：US08188532B2

公开(公告)日：2012-05-29

申请号：US12856295

申请日：2010-08-13

申请人： Chang-Seok Kang ,  Yoo-Cheol Shin ,  Jung-Dal Choi ,  Jong-Sun Sel ,  Ju-Hyung Kim ,  Sang-Hun Jeon

发明人： Chang-Seok Kang ,  Yoo-Cheol Shin ,  Jung-Dal Choi ,  Jong-Sun Sel ,  Ju-Hyung Kim ,  Sang-Hun Jeon

IPC分类号： H01L29/788

CPC分类号： H01L27/11521 ,  H01L21/823462 ,  H01L21/823475 ,  H01L27/115 ,  H01L27/11524 ,  H01L29/7883

摘要： A semiconductor device has a gate contact structure, including a semiconductor substrate, a polycrystalline silicon layer used as a gate electrode of a transistor, a middle conductive layer, a top metal layer having an opening exposing the polycrystalline silicon layer, and a contact plug directly contacting the polycrystalline silicon layer through the opening.

摘要翻译： 半导体器件具有栅极接触结构，包括半导体衬底，用作晶体管的栅电极的多晶硅层，中间导电层，具有暴露多晶硅层的开口的顶部金属层和直接接触的插塞 使多晶硅层通过开口接触。

公开(公告)号：US20120085999A1

公开(公告)日：2012-04-12

申请号：US13099806

申请日：2011-05-03

申请人： I-hun Song ,  Yin Huaxiang ,  Sang-hun Jeon ,  Sung-ho Park

发明人： I-hun Song ,  Yin Huaxiang ,  Sang-hun Jeon ,  Sung-ho Park

IPC分类号： H01L29/12 ,  H01L31/113

CPC分类号： H01L27/14681 ,  H01L27/14692

摘要： Example embodiments disclose transistors, methods of manufacturing the same, and electronic devices including transistors. An active layer of a transistor may include a plurality of material layers (oxide layers) with different energy band gaps. The active layer may include a channel layer and a photo sensing layer. The photo sensing layer may have a single-layered or multi-layered structure. When the photo sensing layer has a multi-layered structure, the photo sensing layer may include a first material layer and a second material layer that are sequentially stacked on a surface of the channel layer. The first layer and the second layer may be alternately stacked one or more times.

摘要翻译： 示例性实施例公开了晶体管，其制造方法以及包括晶体管的电子器件。 晶体管的有源层可以包括具有不同能带隙的多个材料层（氧化物层）。 有源层可以包括沟道层和感光层。 感光层可以具有单层或多层结构。 当感光层具有多层结构时，感光层可以包括依次层叠在沟道层的表面上的第一材料层和第二材料层。 第一层和第二层可以交替堆叠一次或多次。

公开(公告)号：US20110294268A1

公开(公告)日：2011-12-01

申请号：US13204785

申请日：2011-08-08

申请人： Sang-Hun Jeon ,  Moon-Sook Lee ,  Byeong-Ok Cho

发明人： Sang-Hun Jeon ,  Moon-Sook Lee ,  Byeong-Ok Cho

IPC分类号： H01L21/336

CPC分类号： H01L29/41733 ,  H01L27/1292 ,  H01L29/42384

摘要： A thin film transistor includes a layer structure having a gate electrode, a gate insulation layer and a channel layer. A source line may contact the channel layer, and may extend along a direction crossing over the gate electrode. The source line may partially overlap the gate electrode so that both sides of the source line overlapping the gate electrode may be entirely positioned between both sides of the gate electrode. A drain line may make contact with the channel layer and may be spaced apart from the source line by a channel length. The drain line may have a structure symmetrical to that of the source line. Overlap areas among the gate electrode, the source line and the drain line may be reduced, so that the thin film transistor may ensure a high cut-off frequency.

摘要翻译： 薄膜晶体管包括具有栅电极，栅极绝缘层和沟道层的层结构。 源极线可以接触沟道层，并且可以沿着与栅电极交叉的方向延伸。 源极线可以部分地与栅电极重叠，使得与栅电极重叠的源极线的两侧可以完全位于栅电极的两侧之间。 漏极线可以与沟道层接触并且可以与源极线隔开通道长度。 漏极线可以具有与源极线对称的结构。 可以减小栅电极，源极线和漏极线之间的重叠区域，使得薄膜晶体管可以确保高的截止频率。