发明申请
- 专利标题： ESD/ANTENNA DIODES FOR THROUGH-SILICON VIAS
- 专利标题（中）： ESD /天线二极管
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申请号： US12605102申请日： 2009-10-23
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公开(公告)号： US20110095367A1公开(公告)日： 2011-04-28
- 发明人: Qing Su , Min Ni , Zongwu Tang , Jamil Kawa , James D. Sproch
- 申请人： Qing Su , Min Ni , Zongwu Tang , Jamil Kawa , James D. Sproch
- 申请人地址： US CA Mountain View
- 专利权人： SYNOPSYS, INC.
- 当前专利权人： SYNOPSYS, INC.
- 当前专利权人地址： US CA Mountain View
- 主分类号： H01L27/06
- IPC分类号： H01L27/06 ; G06F17/50 ; H01L21/336
摘要：
Roughly described, an antenna diode is formed at least partially within the exclusion zone around a TSV, and is connected to the TSV by way of a metal 1 layer conductor at the same time that the TSV is connected to either the gate poly or a diffusion region of one or more transistors placed outside the exclusion zone.
公开/授权文献
- US08264065B2 ESD/antenna diodes for through-silicon vias 公开/授权日：2012-09-11
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