发明申请
- 专利标题: SCALING OF METAL GATE WITH ALUMINUM CONTAINING METAL LAYER FOR THRESHOLD VOLTAGE SHIFT
- 专利标题(中): 金属门与铝包含金属层用于阈值电压转换
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申请号: US12607110申请日: 2009-10-28
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公开(公告)号: US20110095379A1公开(公告)日: 2011-04-28
- 发明人: Keith Kwong Hon Wong , Dechao Guo , Unoh Kwon
- 申请人: Keith Kwong Hon Wong , Dechao Guo , Unoh Kwon
- 申请人地址: US NY Armonk
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L29/78
- IPC分类号: H01L29/78 ; H01L21/336
摘要:
A method of forming a p-type semiconductor device is provided, which in one embodiment employs an aluminum containing threshold voltage shift layer to produce a threshold voltage shift towards the valence band of the p-type semiconductor device. The method of forming the p-type semiconductor device may include forming a gate structure on a substrate, in which the gate structure includes a gate dielectric layer in contact with the substrate, an aluminum containing threshold voltage shift layer present on the gate dielectric layer, and a metal containing layer in contact with at least one of the aluminum containing threshold voltage shift layer and the gate dielectric layer. P-type source and drain regions may be formed in the substrate adjacent to the portion of the substrate on which the gate structure is present. A p-type semiconductor device provided by the above-described method is also provided.