发明申请
US20110097886A1 SEMICONDUCTOR DEVICE WITH MUSHROOM ELECTRODE AND MANUFACTURE METHOD THEREOF
有权
具有MUSHROOM电极的半导体器件及其制造方法
- 专利标题： SEMICONDUCTOR DEVICE WITH MUSHROOM ELECTRODE AND MANUFACTURE METHOD THEREOF
- 专利标题（中）： 具有MUSHROOM电极的半导体器件及其制造方法
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申请号： US12985742申请日： 2011-01-06
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公开(公告)号： US20110097886A1公开(公告)日： 2011-04-28
- 发明人: Kozo Makiyama , Naoya IKECHI , Takahiro Tan
- 申请人： Kozo Makiyama , Naoya IKECHI , Takahiro Tan
- 申请人地址： JP Kawasaki-shi JP Nakakoma-gun
- 专利权人： FUJITSU LIMITED,FUJITSU QUANTUM DEVICES LIMITED
- 当前专利权人： FUJITSU LIMITED,FUJITSU QUANTUM DEVICES LIMITED
- 当前专利权人地址： JP Kawasaki-shi JP Nakakoma-gun
- 优先权： JP2001-236301 20010803; JP2002-019361 20020129
- 主分类号： H01L21/3205
- IPC分类号： H01L21/3205
摘要：
A semiconductor device has: a semiconductor substrate having a pair of current input/output regions via which current flows; an insulating film formed on the semiconductor substrate and having a gate electrode opening; and a mushroom gate electrode structure formed on the semiconductor substrate via the gate electrode opening, the mushroom gate electrode structure having a stem and a head formed on the stem, the stem having a limited size on the semiconductor substrate along a current direction and having a forward taper shape upwardly and monotonically increasing the size along the current direction, the head having a size expanded stepwise along the current direction, and the stem contacting the semiconductor substrate in the gate electrode opening and riding the insulating film near at a position of at least one of opposite ends of the stem along the current direction.
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