公开(公告)号：US08133775B2

公开(公告)日：2012-03-13

申请号：US12985742

申请日：2011-01-06

申请人： Kozo Makiyama ,  Naoya Ikechi ,  Takahiro Tan

发明人： Kozo Makiyama ,  Naoya Ikechi ,  Takahiro Tan

IPC分类号： H01L21/338 ,  H01L21/28 ,  H01L21/44 ,  H01L21/302

CPC分类号： H01L21/0274 ,  H01L21/28114 ,  H01L21/28264 ,  H01L21/28587 ,  H01L29/42316 ,  H01L29/42376 ,  H01L29/517 ,  H01L29/66462 ,  H01L29/66871 ,  H01L29/78 ,  Y10S430/143 ,  Y10S438/949 ,  Y10S438/95 ,  Y10S438/951

摘要： A semiconductor device has: a semiconductor substrate having a pair of current input/output regions via which current flows; an insulating film formed on the semiconductor substrate and having a gate electrode opening; and a mushroom gate electrode structure formed on the semiconductor substrate via the gate electrode opening, the mushroom gate electrode structure having a stem and a head formed on the stem, the stem having a limited size on the semiconductor substrate along a current direction and having a forward taper shape upwardly and monotonically increasing the size along the current direction, the head having a size expanded stepwise along the current direction, and the stem contacting the semiconductor substrate in the gate electrode opening and riding the insulating film near at a position of at least one of opposite ends of the stem along the current direction.

摘要翻译： 半导体器件具有：半导体衬底，具有电流流过的一对电流输入/输出区域; 形成在所述半导体基板上并具有栅电极开口的绝缘膜; 以及通过所述栅电极开口形成在所述半导体基板上的蘑菇栅极电极结构，所述蘑菇栅电极结构具有杆和形成在所述杆上的头部，所述杆在所述半导体衬底上沿着电流方向具有有限的尺寸，并且具有 向前锥形形状向上并沿着电流方向单调地增加尺寸，头部具有沿着电流方向逐步扩大的尺寸，并且杆在栅极电极开口中接触半导体衬底并且在至少一个位置附近骑绝缘膜 杆的相对端之一沿着当前方向。

公开(公告)号：US07223645B2

公开(公告)日：2007-05-29

申请号：US10768092

申请日：2004-02-02

申请人： Kozo Makiyama ,  Naoya Ikechi ,  Takahiro Tan

发明人： Kozo Makiyama ,  Naoya Ikechi ,  Takahiro Tan

IPC分类号： H01L21/338 ,  H01L21/44

CPC分类号： H01L21/0274 ,  H01L21/28114 ,  H01L21/28264 ,  H01L21/28587 ,  H01L29/42316 ,  H01L29/42376 ,  H01L29/517 ,  H01L29/66462 ,  H01L29/66871 ,  H01L29/78 ,  Y10S430/143 ,  Y10S438/949 ,  Y10S438/95 ,  Y10S438/951

摘要： A semiconductor device has: a semiconductor substrate having a pair of current input/output regions via which current flows; an insulating film formed on the semiconductor substrate and having a gate electrode opening; and a mushroom gate electrode structure formed on the semiconductor substrate via the gate electrode opening, the mushroom gate electrode structure having a stem and a head formed on the stem, the stem having a limited size on the semiconductor substrate along a current direction and having a forward taper shape upwardly and monotonically increasing the size along the current direction, the head having a size expanded stepwise along the current direction, and the stem contacting the semiconductor substrate in the gate electrode opening and riding the insulating film near at a position of at least one of opposite ends of the stem along the current direction.

摘要翻译： 半导体器件具有：半导体衬底，具有电流流过的一对电流输入/输出区域; 形成在所述半导体基板上并具有栅电极开口的绝缘膜; 以及通过所述栅电极开口形成在所述半导体基板上的蘑菇栅极电极结构，所述蘑菇栅电极结构具有杆和形成在所述杆上的头部，所述杆在所述半导体衬底上沿着电流方向具有有限的尺寸，并且具有 向前锥形形状向上并沿着电流方向单调地增加尺寸，头部具有沿着电流方向逐步扩大的尺寸，并且杆在栅极电极开口中接触半导体衬底并且在至少一个位置附近骑绝缘膜 杆的相对端之一沿着当前方向。

公开(公告)号：US20110097886A1

公开(公告)日：2011-04-28

申请号：US12985742

申请日：2011-01-06

申请人： Kozo Makiyama ,  Naoya IKECHI ,  Takahiro Tan

发明人： Kozo Makiyama ,  Naoya IKECHI ,  Takahiro Tan

IPC分类号： H01L21/3205

CPC分类号： H01L21/0274 ,  H01L21/28114 ,  H01L21/28264 ,  H01L21/28587 ,  H01L29/42316 ,  H01L29/42376 ,  H01L29/517 ,  H01L29/66462 ,  H01L29/66871 ,  H01L29/78 ,  Y10S430/143 ,  Y10S438/949 ,  Y10S438/95 ,  Y10S438/951

摘要： A semiconductor device has: a semiconductor substrate having a pair of current input/output regions via which current flows; an insulating film formed on the semiconductor substrate and having a gate electrode opening; and a mushroom gate electrode structure formed on the semiconductor substrate via the gate electrode opening, the mushroom gate electrode structure having a stem and a head formed on the stem, the stem having a limited size on the semiconductor substrate along a current direction and having a forward taper shape upwardly and monotonically increasing the size along the current direction, the head having a size expanded stepwise along the current direction, and the stem contacting the semiconductor substrate in the gate electrode opening and riding the insulating film near at a position of at least one of opposite ends of the stem along the current direction.

摘要翻译： 半导体器件具有：半导体衬底，具有电流流过的一对电流输入/输出区域; 形成在所述半导体基板上并具有栅电极开口的绝缘膜; 以及通过所述栅电极开口形成在所述半导体基板上的蘑菇栅极电极结构，所述蘑菇栅电极结构具有杆和形成在所述杆上的头部，所述杆在所述半导体衬底上沿着电流方向具有有限的尺寸，并且具有 向前锥形形状向上并沿着电流方向单调地增加尺寸，头部具有沿着电流方向逐步扩大的尺寸，并且杆在栅极电极开口中接触半导体衬底并且在至少一个位置附近骑绝缘膜 杆的相对端之一沿着当前方向。

公开(公告)号：US06717271B2

公开(公告)日：2004-04-06

申请号：US10084924

申请日：2002-03-01

申请人： Kozo Makiyama ,  Naoya Ikechi ,  Takahiro Tan

发明人： Kozo Makiyama ,  Naoya Ikechi ,  Takahiro Tan

IPC分类号： H01L2312

CPC分类号： H01L21/0274 ,  H01L21/28114 ,  H01L21/28264 ,  H01L21/28587 ,  H01L29/42316 ,  H01L29/42376 ,  H01L29/517 ,  H01L29/66462 ,  H01L29/66871 ,  H01L29/78 ,  Y10S430/143 ,  Y10S438/949 ,  Y10S438/95 ,  Y10S438/951

摘要： A semiconductor device has: a semiconductor substrate having a pair of current input/output regions via which current flows; an insulating film formed on the semiconductor substrate and having a gate electrode opening; and a mushroom gate electrode structure formed on the semiconductor substrate via the gate electrode opening, the mushroom gate electrode structure having a stem and a head formed on the stem, the stem having a limited size on the semiconductor substrate along a current direction and having a forward taper shape upwardly and monotonically increasing the size along the current direction, the head having a size expanded stepwise along the current direction, and the stem contacting the semiconductor substrate in the gate electrode opening and riding the insulating film near at a position of at least one of opposite ends of the stem along the current direction.

摘要翻译： 半导体器件具有：半导体衬底，具有电流流过的一对电流输入/输出区域; 形成在所述半导体基板上并具有栅电极开口的绝缘膜; 以及通过所述栅电极开口形成在所述半导体基板上的蘑菇栅极电极结构，所述蘑菇栅电极结构具有杆和形成在所述杆上的头部，所述杆在所述半导体衬底上沿着电流方向具有有限的尺寸，并且具有 向前锥形形状向上并沿着电流方向单调地增加尺寸，头部具有沿着电流方向逐步扩大的尺寸，并且杆在栅极电极开口中接触半导体衬底并且在至少一个位置附近骑绝缘膜 杆的相对端之一沿着当前方向。

公开(公告)号：US07888193B2

公开(公告)日：2011-02-15

申请号：US12726761

申请日：2010-03-18

申请人： Kozo Makiyama ,  Naoya Ikechi ,  Takahiro Tan

发明人： Kozo Makiyama ,  Naoya Ikechi ,  Takahiro Tan

IPC分类号： H01L21/00 ,  H01L21/338 ,  H01L21/44 ,  H01L21/302 ,  H01L21/30 ,  C03C15/00 ,  C03C25/68

CPC分类号： H01L21/0274 ,  H01L21/28114 ,  H01L21/28264 ,  H01L21/28587 ,  H01L29/42316 ,  H01L29/42376 ,  H01L29/517 ,  H01L29/66462 ,  H01L29/66871 ,  H01L29/78 ,  Y10S430/143 ,  Y10S438/949 ,  Y10S438/95 ,  Y10S438/951

摘要： A semiconductor device has: a semiconductor substrate having a pair of current input/output regions via which current flows; an insulating film formed on the semiconductor substrate and having a gate electrode opening; and a mushroom gate electrode structure formed on the semiconductor substrate via the gate electrode opening, the mushroom gate electrode structure having a stem and a head formed on the stem, the stem having a limited size on the semiconductor substrate along a current direction and having a forward taper shape upwardly and monotonically increasing the size along the current direction, the head having a size expanded stepwise along the current direction, and the stem contacting the semiconductor substrate in the gate electrode opening and riding the insulating film near at a position of at least one of opposite ends of the stem along the current direction.

摘要翻译： 半导体器件具有：半导体衬底，具有电流流过的一对电流输入/输出区域; 形成在所述半导体基板上并具有栅电极开口的绝缘膜; 以及通过所述栅电极开口形成在所述半导体基板上的蘑菇栅极电极结构，所述蘑菇栅电极结构具有杆和形成在所述杆上的头部，所述杆在所述半导体衬底上沿着电流方向具有有限的尺寸，并且具有 向前锥形形状向上并沿着电流方向单调地增加尺寸，头部具有沿着电流方向逐步扩大的尺寸，并且杆在栅极电极开口中接触半导体衬底并且在至少一个位置附近骑绝缘膜 杆的相对端之一沿着当前方向。

公开(公告)号：US20100173486A1

公开(公告)日：2010-07-08

申请号：US12726761

申请日：2010-03-18

申请人： Kozo Makiyama ,  Naoya IKECHI ,  Takahiro Tan

发明人： Kozo Makiyama ,  Naoya IKECHI ,  Takahiro Tan

IPC分类号： H01L21/28

CPC分类号： H01L21/0274 ,  H01L21/28114 ,  H01L21/28264 ,  H01L21/28587 ,  H01L29/42316 ,  H01L29/42376 ,  H01L29/517 ,  H01L29/66462 ,  H01L29/66871 ,  H01L29/78 ,  Y10S430/143 ,  Y10S438/949 ,  Y10S438/95 ,  Y10S438/951

摘要： A semiconductor device has: a semiconductor substrate having a pair of current input/output regions via which current flows; an insulating film formed on the semiconductor substrate and having a gate electrode opening; and a mushroom gate electrode structure formed on the semiconductor substrate via the gate electrode opening, the mushroom gate electrode structure having a stem and a head formed on the stem, the stem having a limited size on the semiconductor substrate along a current direction and having a forward taper shape upwardly and monotonically increasing the size along the current direction, the head having a size expanded stepwise along the current direction, and the stem contacting the semiconductor substrate in the gate electrode opening and riding the insulating film near at a position of at least one of opposite ends of the stem along the current direction.

摘要翻译： 半导体器件具有：半导体衬底，具有电流流过的一对电流输入/输出区域; 形成在所述半导体基板上并具有栅电极开口的绝缘膜; 以及通过所述栅电极开口形成在所述半导体基板上的蘑菇栅极电极结构，所述蘑菇栅电极结构具有杆和形成在所述杆上的头部，所述杆在所述半导体衬底上沿着电流方向具有有限的尺寸，并且具有 向前锥形形状向上并沿着电流方向单调地增加尺寸，头部具有沿着电流方向逐步扩大的尺寸，并且杆在栅极电极开口中接触半导体衬底并且在至少一个位置附近骑绝缘膜 杆的相对端之一沿着当前方向。

公开(公告)号：US20080113499A1

公开(公告)日：2008-05-15

申请号：US12003559

申请日：2007-12-28

申请人： Kozo Makiyama ,  Naoya Ikechi ,  Takahiro Tan

发明人： Kozo Makiyama ,  Naoya Ikechi ,  Takahiro Tan

IPC分类号： H01L21/3205

CPC分类号： H01L21/0274 ,  H01L21/28114 ,  H01L21/28264 ,  H01L21/28587 ,  H01L29/42316 ,  H01L29/42376 ,  H01L29/517 ,  H01L29/66462 ,  H01L29/66871 ,  H01L29/78 ,  Y10S430/143 ,  Y10S438/949 ,  Y10S438/95 ,  Y10S438/951

摘要： A semiconductor device has: a semiconductor substrate having a pair of current input/output regions via which current flows; an insulating film formed on the semiconductor substrate and having a gate electrode opening; and a mushroom gate electrode structure formed on the semiconductor substrate via the gate electrode opening, the mushroom gate electrode structure having a stem and a head formed on the stem, the stem having a limited size on the semiconductor substrate along a current direction and having a forward taper shape upwardly and monotonically increasing the size along the current direction, the head having a size expanded stepwise along the current direction, and the stem contacting the semiconductor substrate in the gate electrode opening and riding the insulating film near at a position of at least one of opposite ends of the stem along the current direction.

公开(公告)号：US07335542B2

公开(公告)日：2008-02-26

申请号：US11713599

申请日：2007-03-05

申请人： Kozo Makiyama ,  Naoya Ikechi ,  Takahiro Tan

发明人： Kozo Makiyama ,  Naoya Ikechi ,  Takahiro Tan

IPC分类号： H01L21/338 ,  H01L21/44

CPC分类号： H01L21/0274 ,  H01L21/28114 ,  H01L21/28264 ,  H01L21/28587 ,  H01L29/42316 ,  H01L29/42376 ,  H01L29/517 ,  H01L29/66462 ,  H01L29/66871 ,  H01L29/78 ,  Y10S430/143 ,  Y10S438/949 ,  Y10S438/95 ,  Y10S438/951

摘要： A semiconductor device has: a semiconductor substrate having a pair of current input/output regions via which current flows; an insulating film formed on the semiconductor substrate and having a gate electrode opening; and a mushroom gate electrode structure formed on the semiconductor substrate via the gate electrode opening, the mushroom gate electrode structure having a stem and a head formed on the stem, the stem having a limited size on the semiconductor substrate along a current direction and having a forward taper shape upwardly and monotonically increasing the size along the current direction, the head having a size expanded stepwise along the current direction, and the stem contacting the semiconductor substrate in the gate electrode opening and riding the insulating film near at a position of at least one of opposite ends of the stem along the current direction.

摘要翻译： 半导体器件具有：半导体衬底，具有电流流过的一对电流输入/输出区域; 形成在所述半导体基板上并具有栅电极开口的绝缘膜; 以及通过所述栅电极开口形成在所述半导体基板上的蘑菇栅极电极结构，所述蘑菇栅电极结构具有杆和形成在所述杆上的头部，所述杆在所述半导体衬底上沿着电流方向具有有限的尺寸，并且具有 向前锥形形状向上并沿着电流方向单调地增加尺寸，头部具有沿着电流方向逐步扩大的尺寸，并且杆在栅极电极开口中接触半导体衬底并且在至少一个位置附近骑绝缘膜 杆的相对端之一沿着当前方向。

公开(公告)号：US20070161220A1

公开(公告)日：2007-07-12

申请号：US11713599

申请日：2007-03-05

申请人： Kozo Makiyama ,  Naoya Ikechi ,  Takahiro Tan

发明人： Kozo Makiyama ,  Naoya Ikechi ,  Takahiro Tan

IPC分类号： H01L21/3205

CPC分类号： H01L21/0274 ,  H01L21/28114 ,  H01L21/28264 ,  H01L21/28587 ,  H01L29/42316 ,  H01L29/42376 ,  H01L29/517 ,  H01L29/66462 ,  H01L29/66871 ,  H01L29/78 ,  Y10S430/143 ,  Y10S438/949 ,  Y10S438/95 ,  Y10S438/951

摘要： A semiconductor device has: a semiconductor substrate having a pair of current input/output regions via which current flows; an insulating film formed on the semiconductor substrate and having a gate electrode opening; and a mushroom gate electrode structure formed on the semiconductor substrate via the gate electrode opening, the mushroom gate electrode structure having a stem and a head formed on the stem, the stem having a limited size on the semiconductor substrate along a current direction and having a forward taper shape upwardly and monotonically increasing the size along the current direction, the head having a size expanded stepwise along the current direction, and the stem contacting the semiconductor substrate in the gate electrode opening and riding the insulating film near at a position of at least one of opposite ends of the stem along the current direction.

公开(公告)号：US08581261B2

公开(公告)日：2013-11-12

申请号：US13276830

申请日：2011-10-19

申请人： Masahito Kanamura ,  Kozo Makiyama

发明人： Masahito Kanamura ,  Kozo Makiyama

IPC分类号： H01L29/778

CPC分类号： H01L21/263 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/3228 ,  H01L29/1029 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7787

摘要： Two layers of protection films are formed such that a sheet resistance at a portion directly below the protection film is higher than that at a portion directly below the protection film. The protection films are formed, for example, of SiN film, as insulating films. The protection film is formed to be higher, for instance, in hydrogen concentration than the protection film so that the protection film is higher in refractive index the protection film. The protection film is formed to cover a gate electrode and extend to the vicinity of the gate electrode on an electron supplying layer. The protection film is formed on the entire surface to cover the protection film. According to this configuration, the gate leakage is significantly reduced by a relatively simple configuration to realize a highly-reliable compound semiconductor device achieving high voltage operation, high withstand voltage, and high output.