发明申请
- 专利标题： Utilization of Organic Buffer Layer to Fabricate High Performance Carbon Nanoelectronic Devices
- 专利标题（中）： 利用有机缓冲层制造高性能碳纳米电子器件
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申请号： US12611421申请日： 2009-11-03
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公开(公告)号： US20110101308A1公开(公告)日： 2011-05-05
- 发明人: Phaedon Avouris , Damon B. Farmer , Fengnian Xia
- 申请人： Phaedon Avouris , Damon B. Farmer , Fengnian Xia
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L21/336
摘要：
A fabrication process for a nanoelectronic device and a device are provided. Channel material is deposited on a substrate to form a channel. A source metal contact and a drain metal contact are deposited on the channel material, and the source metal contact and the drain metal contact are on opposing ends of the channel material. A polyhydroxystyrene derivative is deposited on the channel material. A top gate oxide is deposited on the polymer layer. A top gate metal is deposited on the top gate oxide.
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