Invention Application
US20110101429A1 SEMICONDUCTOR DEVICE STRUCTURES WITH DUAL FIN STRUCTURES AND ELECTRONIC DEVICE
审中-公开
具有双重结构和电子器件的半导体器件结构
- Patent Title: SEMICONDUCTOR DEVICE STRUCTURES WITH DUAL FIN STRUCTURES AND ELECTRONIC DEVICE
- Patent Title (中): 具有双重结构和电子器件的半导体器件结构
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Application No.: US12987746Application Date: 2011-01-10
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Publication No.: US20110101429A1Publication Date: 2011-05-05
- Inventor: Terrence McDaniel
- Applicant: Terrence McDaniel
- Applicant Address: US ID Boise
- Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee Address: US ID Boise
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/06
Abstract:
Fin-FET devices and methods of fabrication are disclosed. The Fin-FET devices include dual fins that may be used to provide a trench region between a source region and a drain region. In some embodiments, the dual fins may be formed by forming a trench with fin structures on opposite sides in a protruding region of a substrate. The dual fins may be useful in forming single-gate, double-gate or triple-gate fin-PET devices. Electronic systems including such fin-FET devices are also disclosed.
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