发明申请
- 专利标题： Thin Film Transistors and Fabrication Methods Thereof
- 专利标题（中）： 薄膜晶体管及其制作方法
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申请号： US13005349申请日： 2011-01-12
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公开(公告)号： US20110101459A1公开(公告)日： 2011-05-05
- 发明人: Feng-Yuan Gan , Han-Tu Lin
- 申请人： Feng-Yuan Gan , Han-Tu Lin
- 申请人地址： TW Hsinchu
- 专利权人： AU OPTRONICS CORP.
- 当前专利权人： AU OPTRONICS CORP.
- 当前专利权人地址： TW Hsinchu
- 优先权： TW93135850 20041122
- 主分类号： H01L27/12
- IPC分类号： H01L27/12 ; H01L21/336
摘要：
Thin film transistors and fabrication methods thereof. A gate is formed overlying a portion of a substrate. A first vanadium oxide layer formed overlying the gate and the substrate. A gate-insulating layer is formed overlying the first vanadium oxide layer. A semiconductor layer is formed on a portion of the gate-insulating layer. A source and a drain are formed on a portion of the semiconductor layer.
公开/授权文献
- US2708130A Windshield cleaner joint 公开/授权日：1955-05-10
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