发明申请
US20110101533A1 INTEGRATED (MULTILAYER) CIRCUITS AND PROCESS OF PRODUCING THE SAME 有权
集成(多层)电路及其生产方法

INTEGRATED (MULTILAYER) CIRCUITS AND PROCESS OF PRODUCING THE SAME
摘要:
A process of forming a semiconductor integrated circuit that includes the steps of: forming at least a first element having a first pattern of conductive material and including a polymer layer surrounding the conductive material, forming at least a second element having a second pattern of conductive material and including a polymer layer surrounding the conductive material, positioning the first element relative to the second element, and bonding the polymer layer of the first and second elements at a temperature below a melting temperature of the conductive materials of the first and second elements wherein the conductive material of the first element contacts the conductive material of the second element and is maintained in position by the bonded polymer layers.
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