发明申请
US20110102042A1 APPARATUS AND METHOD FOR HARDENING LATCHES IN SOI CMOS DEVICES
有权
用于在SOI CMOS器件中硬化栅极的装置和方法
- 专利标题: APPARATUS AND METHOD FOR HARDENING LATCHES IN SOI CMOS DEVICES
- 专利标题(中): 用于在SOI CMOS器件中硬化栅极的装置和方法
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申请号: US12987106申请日: 2011-01-08
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公开(公告)号: US20110102042A1公开(公告)日: 2011-05-05
- 发明人: Ethan H. Cannon , AJ KleinOsowski , K. Paul Muller , Tak H. Ning , Philip J. Oldiges , Leon J. Sigal , James D. Warnock , Dieter Wendel
- 申请人: Ethan H. Cannon , AJ KleinOsowski , K. Paul Muller , Tak H. Ning , Philip J. Oldiges , Leon J. Sigal , James D. Warnock , Dieter Wendel
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 主分类号: H03K3/00
- IPC分类号: H03K3/00
摘要:
A method of determining one or more transistors within a particular circuit to be respectively replaced with a hardened transistor includes: identifying, as not requiring hardening, one or more transistors; identifying, as candidates for hardening, each transistor in the circuit not previously identified as not requiring hardening; and employing the hardened transistor in place of a transistor identified as a candidate for hardening. The circuit is a latch and the transistor is an SOI CMOS FET. The transistor is also an SOI transistor. The series transistor includes first and second series-connected transistors having a shared source/drain region whereby a drain of the first series-connected transistor is merged with a source of the second series-connected transistor.
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