发明申请
US20110104885A1 METHOD FOR TREATING A METAL OXIDE LAYER 失效
用于处理金属氧化物层的方法

METHOD FOR TREATING A METAL OXIDE LAYER
摘要:
The invention relates to a method for treating a metal oxide layer deposited on a substrate. The method comprises the step of applying a substantially atmospheric plasma process at a relatively low temperature. Preferably, the temperature during the plasma process is lower than approximately 180° C. Further, the atmospheric plasma process can be applied in a plasma chamber comprising H2 gas and He gas.
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