发明申请
US20110108099A1 METHOD OF FORMING TRANSPARENT ZINC OXIDE LAYERS FOR HIGH EFFICIENCY PHOTOVOLTAIC CELLS
审中-公开
形成用于高效光伏电池的透明氧化锌层的方法
- 专利标题： METHOD OF FORMING TRANSPARENT ZINC OXIDE LAYERS FOR HIGH EFFICIENCY PHOTOVOLTAIC CELLS
- 专利标题（中）： 形成用于高效光伏电池的透明氧化锌层的方法
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申请号： US12616578申请日： 2009-11-11
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公开(公告)号： US20110108099A1公开(公告)日： 2011-05-12
- 发明人: Mustafa Pinarbasi , James Freitag
- 申请人： Mustafa Pinarbasi , James Freitag
- 申请人地址： US CA San Jose
- 专利权人： SoloPower, Inc.
- 当前专利权人： SoloPower, Inc.
- 当前专利权人地址： US CA San Jose
- 主分类号： H01L31/00
- IPC分类号： H01L31/00 ; H01L21/283
摘要：
A solar cell including a high electrical resistivity transparent layer formed on a CdS buffer layer is provided. The high electrical resistivity transparent layer includes an intrinsic oxide film formed on the buffer layer and an intermediate oxide film formed on the intrinsic oxide film. The intrinsic oxide film includes undoped zinc oxide and has a thickness range of 10 to 40 nm. The intermediate oxide film includes semi-intrinsic zinc oxide doped with aluminum and has a thickness range of 50-150 nm. The intermediate oxide film has an aluminum concentration of less than 1000 ppm.
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