发明申请
US20110108958A1 Metal Oxide Semiconductor (MOS)-Compatible High-Aspect Ratio Through-Wafer Vias and Low-Stress Configuration Thereof
失效
金属氧化物半导体（MOS） - 兼容的高宽比通过晶片通孔和低应力配置
- 专利标题： Metal Oxide Semiconductor (MOS)-Compatible High-Aspect Ratio Through-Wafer Vias and Low-Stress Configuration Thereof
- 专利标题（中）： 金属氧化物半导体（MOS） - 兼容的高宽比通过晶片通孔和低应力配置
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申请号： US12614062申请日： 2009-11-06
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公开(公告)号： US20110108958A1公开(公告)日： 2011-05-12
- 发明人: Bucknell C. Webb
- 申请人： Bucknell C. Webb
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L21/3205 ; H01L21/768
摘要：
A structure includes a wafer having a top wafer surface. The wafer defines an opening. The top wafer surface defines a first reference direction perpendicular to the top wafer surface. The wafer has a thickness in the first reference direction. The structure also includes a through-wafer via formed in the opening. The through-wafer via has a shape, when viewed in a plane perpendicular to the first reference direction and parallel to the top wafer surface, of at least one of a spiral and a C-shape. The through-wafer via has a height in the first reference direction essentially equal to the thickness of the wafer in the first reference direction. Manufacturing techniques are also disclosed.
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