发明申请
- 专利标题: Semiconductor System Integrated With Through Silicon Vias for Nerve Regeneration
- 专利标题(中): 半导体系统通过硅通道进行神经再生
-
申请号: US12616932申请日: 2009-11-12
-
公开(公告)号: US20110112606A1公开(公告)日: 2011-05-12
- 发明人: Alan Gatherer , Walter H. Schroen
- 申请人: Alan Gatherer , Walter H. Schroen
- 申请人地址: US TX Dallas
- 专利权人: TEXAS INSTRUMENTS INCORPORATED
- 当前专利权人: TEXAS INSTRUMENTS INCORPORATED
- 当前专利权人地址: US TX Dallas
- 主分类号: A61N1/00
- IPC分类号: A61N1/00
摘要:
An integrated circuit (IC) chip (100) expanded to nerve fiber (602) growth in the third dimension by through-silicon via-holes (TSV) (131), with an electrically conductive inner sidewall (303) having a roughness (303a) suitable for supporting the growing fiber and conductive connections (210) to the circuitry (101). The TSVs are fabricated parallel to each other and may be arrayed in regular patterns. The chip, provided with a pad (230) for contacting a nerve end and attaching a neuron, acts as a permanent protective sheath for the parallel growing fibers. Nerve fiber growth is stimulated by combining in the chip electrical and magnetic pulses and neurotrophic factors (603); continuous communication with external monitors is provided. The IC provides each TSV with a signal generator, electric and magnetic field generator, power source, potential sensor, and transceiver. The electronic signals may initiate a predetermined action potential in the adjacent nerve fiber end and a sensor is configured for sensing the action potential in the nerve fiber end.
信息查询