发明申请
- 专利标题： NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- 专利标题（中）： 氮化物半导体器件及其制造方法
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申请号： US13010238申请日： 2011-01-20
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公开(公告)号： US20110114967A1公开(公告)日： 2011-05-19
- 发明人: Masahiro HIKITA , Tetsuzo UEDA , Manabu YANAGIHARA , Yasuhiro UEMOTO , Tsuyoshi TANAKA
- 申请人： Masahiro HIKITA , Tetsuzo UEDA , Manabu YANAGIHARA , Yasuhiro UEMOTO , Tsuyoshi TANAKA
- 申请人地址： JP Osaka
- 专利权人： PANASONIC CORPORATION
- 当前专利权人： PANASONIC CORPORATION
- 当前专利权人地址： JP Osaka
- 优先权： JP2006-267476 20060929
- 主分类号： H01L29/205
- IPC分类号： H01L29/205 ; H01L29/78
摘要：
A nitride semiconductor device includes: a substrate; a first nitride semiconductor layer formed over the substrate; a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a larger band gap energy than the first nitride semiconductor layer; a third nitride semiconductor layer formed on the second nitride semiconductor layer and including a p-type nitride semiconductor with at least a single-layer structure; a gate electrode formed on the third nitride semiconductor layer; and a source electrode and a drain electrode formed in regions located on both sides of the gate electrode, respectively. The third nitride semiconductor layer has a thickness greater in a portion below the gate electrode than in a portion below the side of the gate electrode.
公开/授权文献
- US08164115B2 Nitride semiconductor device 公开/授权日：2012-04-24
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