发明申请
- 专利标题： INTERCONNECT WITH FLEXIBLE DIELECTRIC LAYER
- 专利标题（中）： 与柔性电介质层互连
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申请号： US12621569申请日： 2009-11-19
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公开(公告)号： US20110115088A1公开(公告)日： 2011-05-19
- 发明人: Ching-Yu Lo , Bo-Jiun Lin , Hai-Ching Chen , Tien-I Bao , Shau-Lin Shue , Chen-Hua Yu
- 申请人： Ching-Yu Lo , Bo-Jiun Lin , Hai-Ching Chen , Tien-I Bao , Shau-Lin Shue , Chen-Hua Yu
- 申请人地址： TW Hsin-Chu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L23/48
- IPC分类号： H01L23/48
摘要：
An integrated circuit device has a dual damascene structure including a lower via portion and an upper line portion. The lower via portion is formed in a polyimide layer, and the upper line portion is formed in an inter-metal dielectric (IMD) layer formed of USG or polyimide. A passivation layer is formed on the IMD layer, and a bond pad is formed overlying the passivation layer to electrically connect the upper line portion.
公开/授权文献
- US08836127B2 Interconnect with flexible dielectric layer 公开/授权日：2014-09-16
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