发明申请
US20110116306A1 MAGNETIC RANDOM ACCESS MEMORY AND INITIALIZING METHOD FOR THE SAME
有权
磁性随机存取存储器及其相应的初始化方法
- 专利标题： MAGNETIC RANDOM ACCESS MEMORY AND INITIALIZING METHOD FOR THE SAME
- 专利标题（中）： 磁性随机存取存储器及其相应的初始化方法
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申请号： US13054577申请日： 2009-07-02
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公开(公告)号： US20110116306A1公开(公告)日： 2011-05-19
- 发明人: Tetsuhiro Suzuki , Shunsuke Fukami , Kiyokazu Nagahara , Norikazu Oshima , Nobuyuki Ishiwata
- 申请人： Tetsuhiro Suzuki , Shunsuke Fukami , Kiyokazu Nagahara , Norikazu Oshima , Nobuyuki Ishiwata
- 申请人地址： JP TOKYO
- 专利权人： NEC CORPORATION
- 当前专利权人： NEC CORPORATION
- 当前专利权人地址： JP TOKYO
- 优先权： JP2008-183703 20080715
- 国际申请： PCT/JP2009/062083 WO 20090702
- 主分类号： G11C11/22
- IPC分类号： G11C11/22 ; H01L29/82
摘要：
A domain wall motion type MRAM has: a magnetic recording layer 10 being a ferromagnetic layer having perpendicular magnetic anisotropy; a pair of current supply terminals 14a and 14b connected to the magnetic recording layer 10 for supplying a current to the magnetic recording layer 10; and an anti-ferromagnetic layer 45 being in contact with a first region R1 of the magnetic recording layer 10. The first region R1 includes a part of a current supply region RA of the magnetic recording layer 10 that is between the pair of current supply terminals 14a and 14b.
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