发明申请
- 专利标题： SACRIFICIAL OFFSET PROTECTION FILM FOR A FINFET DEVICE
- 专利标题（中）： FINFET器件的非常偏移保护膜
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申请号： US12622038申请日： 2009-11-19
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公开(公告)号： US20110117679A1公开(公告)日： 2011-05-19
- 发明人: Tsung-Lin Lee , Feng Yuan , Chih Chieh Yeh
- 申请人： Tsung-Lin Lee , Feng Yuan , Chih Chieh Yeh
- 申请人地址： TW Hsin-Chu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L21/66
- IPC分类号： H01L21/66 ; H01L21/336
摘要：
A method for fabricating a semiconductor device is disclosed. An exemplary embodiment of the method includes providing a substrate; forming a fin structure over the substrate; forming a gate structure, wherein the gate structure overlies a portion of the fin structure; forming a sacrificial-offset-protection layer over another portion of the fin structure; and thereafter performing an implantation process.
公开/授权文献
- US08445340B2 Sacrificial offset protection film for a FinFET device 公开/授权日：2013-05-21
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