发明申请
US20110117713A1 METHOD OF MAKING FLASH MEMORY CELLS AND PERIPHERAL CIRCUITS HAVING STI, AND FLASH MEMORY DEVICES AND COMPUTER SYSTEMS HAVING THE SAME
失效
制造闪速存储器细胞的方法和具有STI的外围电路以及具有该闪存存储器的闪速存储器件和计算机系统
- 专利标题： METHOD OF MAKING FLASH MEMORY CELLS AND PERIPHERAL CIRCUITS HAVING STI, AND FLASH MEMORY DEVICES AND COMPUTER SYSTEMS HAVING THE SAME
- 专利标题（中）： 制造闪速存储器细胞的方法和具有STI的外围电路以及具有该闪存存储器的闪速存储器件和计算机系统
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申请号： US12979890申请日： 2010-12-28
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公开(公告)号： US20110117713A1公开(公告)日： 2011-05-19
- 发明人: Jin-Taek Park , Young-Woo Park , Jang-Hyun You , Jung-Dal Choi
- 申请人： Jin-Taek Park , Young-Woo Park , Jang-Hyun You , Jung-Dal Choi
- 优先权： KR10-2008-59077 20080623
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/762
摘要：
An integrated circuit includes flash memory cells, and peripheral circuitry including low voltage transistors (LVT) and high voltage transistors (HVT). The integrated circuit includes a tunnel barrier layer comprising SiON, SiN or other high-k material. The tunnel barrier layer may comprise a part of the gate dielectric of the HVTs. The tunnel barrier layer may constitute the entire gate dielectric of the HVTs. The corresponding tunnel barrier layer may be formed between or upon shallow trench isolation (STIs). Therefore, the manufacturing efficiency of a driver chip IC may be increased.