发明申请
- 专利标题： Process for the Manufacture of a High Density ITO Sputtering Target
- 专利标题（中）： 制造高密度ITO溅射靶的工艺
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申请号： US12992067申请日： 2009-05-07
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公开(公告)号： US20110127162A1公开(公告)日： 2011-06-02
- 发明人: Charles Edmund King , Dosten Baluch
- 申请人： Charles Edmund King , Dosten Baluch
- 优先权： GB0808431.1 20080512
- 国际申请： PCT/GB2009/050475 WO 20090507
- 主分类号： C23C14/00
- IPC分类号： C23C14/00 ; C01G19/02 ; B28B1/14
摘要：
A process for manufacturing indium tin oxide (ITO) sputtering targets as described. The process includes the precipitation of indium and tin hydroxides, sintering in the absence of chloride ions, using the resultant oxide powders to prepare an aqueous slip with dispersing agent, binder, special high density promoting agents and compacting the slip in a specially surface coated porous mold using the method of slip casting followed by sintering the resultant compacted target body to yield high density ITO target.
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