发明申请
- 专利标题： Neutron Detector with Gamma Ray Isolation
- 专利标题（中）： 中子探测器与伽玛射线隔离
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申请号： US13010996申请日： 2011-01-21
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公开(公告)号： US20110127527A1公开(公告)日： 2011-06-02
- 发明人: Francis J. Kub , Bernard F. Phlips , Karl D. Hobart , Eric A. Wulf
- 申请人： Francis J. Kub , Bernard F. Phlips , Karl D. Hobart , Eric A. Wulf
- 申请人地址： US DC Washington
- 专利权人： The Government of the United States of America, as represented by the Secretary of the Navy
- 当前专利权人： The Government of the United States of America, as represented by the Secretary of the Navy
- 当前专利权人地址： US DC Washington
- 主分类号： H01L31/115
- IPC分类号： H01L31/115
摘要：
A silicon-on-insulator (SOI) neutron detector comprising a silicon-on-insulator structure, wherein the silicon-on-insulator structure consists of an active semiconductor layer, a buried layer, and a handle substrate, a lateral carrier transport and collection detector structure within the active semiconductor layer of the silicon-on-insulator structure, and a neutron to high energy particle converter layer on the active semiconductor layer.
公开/授权文献
- US08008626B2 Neutron detector with gamma ray isolation 公开/授权日：2011-08-30
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