公开(公告)号：US07902513B2

公开(公告)日：2011-03-08

申请号：US12406262

申请日：2009-03-18

申请人： Francis J. Kub ,  Bernard F. Phlips ,  Karl D. Hobart ,  Eric A. Wulf

发明人： Francis J. Kub ,  Bernard F. Phlips ,  Karl D. Hobart ,  Eric A. Wulf

IPC分类号： G01T3/08

CPC分类号： G01T3/08

摘要： A silicon-on-insulator (SOI) neutron detector comprising a silicon-on-insulator structure, wherein the silicon-on-insulator structure consists of an active semiconductor layer, a buried layer, and a handle substrate, a lateral carrier transport and collection detector structure within the active semiconductor layer of the silicon-on-insulator structure, and a neutron to high energy particle converter layer on the active semiconductor layer.

公开(公告)号：US20110127527A1

公开(公告)日：2011-06-02

申请号：US13010996

申请日：2011-01-21

申请人： Francis J. Kub ,  Bernard F. Phlips ,  Karl D. Hobart ,  Eric A. Wulf

发明人： Francis J. Kub ,  Bernard F. Phlips ,  Karl D. Hobart ,  Eric A. Wulf

IPC分类号： H01L31/115

CPC分类号： G01T3/08

摘要： A silicon-on-insulator (SOI) neutron detector comprising a silicon-on-insulator structure, wherein the silicon-on-insulator structure consists of an active semiconductor layer, a buried layer, and a handle substrate, a lateral carrier transport and collection detector structure within the active semiconductor layer of the silicon-on-insulator structure, and a neutron to high energy particle converter layer on the active semiconductor layer.

摘要翻译： 一种绝缘体上硅（SOI）中子探测器，其包括绝缘体上硅结构，其中绝缘体上硅结构由有源半导体层，掩埋层和手柄衬底组成，侧向载流子传输和收集 绝缘体上硅结构的有源半导体层内的检测器结构以及有源半导体层上的中子到高能量粒子转换器层。

公开(公告)号：US20100213380A1

公开(公告)日：2010-08-26

申请号：US12406262

申请日：2009-03-18

申请人： Francis J. Kub ,  Bernard F. Phlips ,  Karl D. Hobart ,  Eric A. Wulf

发明人： Francis J. Kub ,  Bernard F. Phlips ,  Karl D. Hobart ,  Eric A. Wulf

IPC分类号： G01T3/08 ,  H01L31/18

CPC分类号： G01T3/08

摘要： A silicon-on-insulator (SOI) neutron detector comprising a silicon-on-insulator structure, wherein the silicon-on-insulator structure consists of an active semiconductor layer, a buried layer, and a handle substrate, a lateral carrier transport and collection detector structure within the active semiconductor layer of the silicon-on-insulator structure, and a neutron to high energy particle converter layer on the active semiconductor layer.

摘要翻译： 一种绝缘体上硅（SOI）中子探测器，其包括绝缘体上硅结构，其中绝缘体上硅结构由有源半导体层，掩埋层和手柄衬底组成，侧向载流子传输和收集 绝缘体上硅结构的有源半导体层内的检测器结构以及有源半导体层上的中子到高能量粒子转换器层。

公开(公告)号：US09685513B2

公开(公告)日：2017-06-20

申请号：US14060916

申请日：2013-10-23

申请人： Francis J. Kub ,  Travis J. Anderson ,  Karl D. Hobart

发明人： Francis J. Kub ,  Travis J. Anderson ,  Karl D. Hobart

IPC分类号： H01L23/532 ,  H01L29/16 ,  H01L29/205 ,  H01L29/20 ,  H01L29/78 ,  H01L29/66 ,  H01L29/778 ,  H01L23/373

CPC分类号： H01L29/1602 ,  H01L23/3732 ,  H01L23/5329 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/66462 ,  H01L29/7787 ,  H01L29/78

摘要： Semiconductor devices that include a semiconductor structure integrated with one or more diamond material layers. A first diamond material layer is formed on a bottom surface and optionally, the side surfaces of the semiconductor structure. In some embodiments, at least a portion of the semiconductor structure is embedded in the diamond. An electrical device can be formed on a top surface of the semiconductor structure. A second diamond material layer can be formed on the top surface of the semiconductor structure. The semiconductor structure can include a III-nitride material such as GaN, which can be embedded within a the first diamond material layer or encased by the first and/or second diamond material layer.

公开(公告)号：US09196614B2

公开(公告)日：2015-11-24

申请号：US14617510

申请日：2015-02-09

申请人： Francis J. Kub ,  Travis J. Anderson ,  Andrew D. Koehler ,  Karl D. Hobart

发明人： Francis J. Kub ,  Travis J. Anderson ,  Andrew D. Koehler ,  Karl D. Hobart

IPC分类号： H01L27/095 ,  H01L29/78 ,  H01L29/20 ,  H01L29/66 ,  H01L29/417 ,  H01L29/778 ,  H01L29/10 ,  H01L21/285 ,  H01L29/45 ,  H01L29/205 ,  H01L21/8228 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/04 ,  H01L29/201 ,  H01L29/36 ,  H01L21/8252 ,  H01L21/02 ,  H01L21/265 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/762 ,  H01L29/207 ,  H01L29/16 ,  H01L29/423 ,  H01L29/51

CPC分类号： H01L27/095 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/26546 ,  H01L21/28575 ,  H01L21/28587 ,  H01L21/30612 ,  H01L21/3065 ,  H01L21/762 ,  H01L21/8228 ,  H01L21/8238 ,  H01L21/8252 ,  H01L27/092 ,  H01L27/0921 ,  H01L27/0922 ,  H01L29/045 ,  H01L29/1075 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/205 ,  H01L29/207 ,  H01L29/365 ,  H01L29/407 ,  H01L29/41725 ,  H01L29/41766 ,  H01L29/42364 ,  H01L29/452 ,  H01L29/51 ,  H01L29/66431 ,  H01L29/66439 ,  H01L29/66462 ,  H01L29/66477 ,  H01L29/778 ,  H01L29/7781 ,  H01L29/7782 ,  H01L29/7783 ,  H01L29/7784 ,  H01L29/7786 ,  H01L29/7787 ,  H01L29/78 ,  H01L29/7831

摘要： An inverted P-channel III-nitride field effect transistor with hole carriers in the channel comprising a gallium-polar III-Nitride barrier material, a second material layer, a two-dimensional hole gas in the second layer, and wherein the gallium-polar material comprises one or more III-Nitride epitaxial material layers grown such that when GaN is epitaxially grown the top surface of the epitaxial layer is gallium-polar. A method of making an inverted P-channel III-nitride field effect transistor with hole carriers in the channel comprising selecting a face or offcut orientation of a substrate so that the gallium-polar (0001) face is the dominant face, growing a nucleation layer, growing a gallium-polar epitaxial layer, doping the epitaxial layer, growing a barrier layer, etching the GaN, forming contacts, performing device isolation, defining a gate opening, depositing and defining gate metal, making a contact window, depositing and defining a thick metal.

摘要翻译： 在通道中具有空穴载流子的反向P沟道III族氮化物场效应晶体管，其包含镓极性III-氮化物阻挡材料，第二材料层，第二层中的二维空穴气体，并且其中镓极性 材料包括一个或多个生长的III-Nitride外延材料层，使得当外延生长GaN时，外延层的顶表面是镓极性的。 在通道中制造具有空穴载流子的反相P沟道III族氮化物场效应晶体管的方法，包括选择衬底的面或切口取向，使得镓极（0001）面是主要面，生长成核层 ，生长镓极性外延层，掺杂外延层，生长势垒层，蚀刻GaN，形成接触，执行器件隔离，限定栅极开口，沉积和限定栅极金属，形成接触窗口，沉积和限定 厚金属。

公开(公告)号：US20150221760A1

公开(公告)日：2015-08-06

申请号：US14617510

申请日：2015-02-09

申请人： Francis J. Kub ,  Travis J. Anderson ,  Andrew D. Koehler ,  Karl D. Hobart

发明人： Francis J. Kub ,  Travis J. Anderson ,  Andrew D. Koehler ,  Karl D. Hobart

IPC分类号： H01L29/778 ,  H01L29/20 ,  H01L29/205 ,  H01L29/207 ,  H01L29/201 ,  H01L21/762 ,  H01L21/02 ,  H01L21/306 ,  H01L21/265 ,  H01L21/3065 ,  H01L29/36 ,  H01L29/66 ,  H01L29/04

CPC分类号： H01L27/095 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/26546 ,  H01L21/28575 ,  H01L21/28587 ,  H01L21/30612 ,  H01L21/3065 ,  H01L21/762 ,  H01L21/8228 ,  H01L21/8238 ,  H01L21/8252 ,  H01L27/092 ,  H01L27/0921 ,  H01L27/0922 ,  H01L29/045 ,  H01L29/1075 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/205 ,  H01L29/207 ,  H01L29/365 ,  H01L29/407 ,  H01L29/41725 ,  H01L29/41766 ,  H01L29/42364 ,  H01L29/452 ,  H01L29/51 ,  H01L29/66431 ,  H01L29/66439 ,  H01L29/66462 ,  H01L29/66477 ,  H01L29/778 ,  H01L29/7781 ,  H01L29/7782 ,  H01L29/7783 ,  H01L29/7784 ,  H01L29/7786 ,  H01L29/7787 ,  H01L29/78 ,  H01L29/7831

摘要： An inverted P-channel III-nitride field effect transistor with hole carriers in the channel comprising a gallium-polar III-Nitride first material, a barrier material layer, a two-dimensional hole gas in the barrier layer, and wherein the gallium-polar material comprises one or more III-Nitride epitaxial material layers grown such that when GaN is epitaxially grown the top surface of the epitaxial layer is gallium-polar. A method of making an inverted P-channel III-nitride field effect transistor with hole carriers in the channel comprising selecting a face or offcut orientation of a substrate so that the gallium-polar (0001) face is the dominant face, growing a nucleation layer, growing a gallium-polar epitaxial layer, doping the epitaxial layer, growing a barrier layer, etching the GaN, forming contacts, performing device isolation, defining a gate opening, depositing and defining gate metal, making a contact window, depositing and defining a thick metal.

摘要翻译： 在通道中具有空穴载流子的反相P沟道III族氮化物场效应晶体管，其包含镓极性III-氮化物第一材料，阻挡材料层，阻挡层中的二维空穴气体，并且其中镓极性 材料包括一个或多个生长的III-Nitride外延材料层，使得当外延生长GaN时，外延层的顶表面是镓极性的。 在通道中制造具有空穴载流子的反相P沟道III族氮化物场效应晶体管的方法，包括选择衬底的面或切口取向，使得镓极（0001）面是主要面，生长成核层 ，生长镓极性外延层，掺杂外延层，生长势垒层，蚀刻GaN，形成接触，执行器件隔离，限定栅极开口，沉积和限定栅极金属，形成接触窗口，沉积和限定 厚金属。

公开(公告)号：US09029833B2

公开(公告)日：2015-05-12

申请号：US14471001

申请日：2014-08-28

申请人： Francis J. Kub ,  Karl D. Hobart ,  Travis J. Anderson

发明人： Francis J. Kub ,  Karl D. Hobart ,  Travis J. Anderson

IPC分类号： H01L29/06 ,  H01L31/00 ,  H01L31/028 ,  H01L27/148 ,  H01L31/0336 ,  H01L27/146

CPC分类号： H01L31/028 ,  H01L27/14643 ,  H01L27/14692 ,  H01L27/14694 ,  H01L27/148 ,  H01L31/0336

摘要： Ultraviolet or Extreme Ultraviolet and/or visible detector apparatus and fabrication processes are presented, in which the detector includes a thin graphene electrode structure disposed over a semiconductor surface to provide establish a potential in the semiconductor material surface and to collect photogenerated carriers, with a first contact providing a top side or bottom side connection for the semiconductor structure and a second contact for connection to the graphene layer.

摘要翻译： 提出了紫外或极紫外和/或可见的检测器装置和制造方法，其中检测器包括设置在半导体表面上的薄的石墨烯电极结构，以在半导体材料表面中建立电位并且收集光生载流子，第一 接触提供用于半导体结构的顶侧或底侧连接以及用于连接到石墨烯层的第二接触。

公开(公告)号：US20140141580A1

公开(公告)日：2014-05-22

申请号：US14165602

申请日：2014-01-28

申请人： Francis J. Kub ,  Travis Anderson ,  Karl D. Hobart ,  Michael A. Mastro ,  Charles R. Eddy, Jr.

发明人： Francis J. Kub ,  Travis Anderson ,  Karl D. Hobart ,  Michael A. Mastro ,  Charles R. Eddy, Jr.

IPC分类号： H01L29/66

CPC分类号： H01L29/778 ,  H01L29/0847 ,  H01L29/0891 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/402 ,  H01L29/42316 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7783 ,  H01L29/7786

摘要： High electron mobility transistors and fabrication processes are presented in which a barrier material layer of uniform thickness is provided for threshold voltage control under an enhanced channel charge inducing material layer (ECCIML) in source and drain regions with the ECCIML layer removed in the gate region.

摘要翻译： 提出了高电子迁移率晶体管和制造工艺，其中提供均匀厚度的阻挡材料层用于在栅极区域中去除ECCIML层的源极和漏极区域内的增强沟道电荷诱导材料层（ECCIML）下的阈值电压控制。

公开(公告)号：US08723218B2

公开(公告)日：2014-05-13

申请号：US13605024

申请日：2012-09-06

申请人： Karl D. Hobart ,  Francis J. Kub ,  Mario Ancona ,  Eugene A. Imhoff

发明人： Karl D. Hobart ,  Francis J. Kub ,  Mario Ancona ,  Eugene A. Imhoff

IPC分类号： H01L29/74

CPC分类号： H01L29/1608 ,  H01L21/02365 ,  H01L29/0657 ,  H01L29/0692 ,  H01L29/2003 ,  H01L29/417 ,  H01L29/6606 ,  H01L29/66136 ,  H01L29/66143 ,  H01L29/8613 ,  H01L29/872

摘要： Silicon carbide PiN diodes are presented with reduced temperature coefficient crossover points by limited p type contact area to limit hole injection in the n type drift layer in order to provide a lower current at which the diode shifts from negative temperature coefficient to a positive temperature coefficient of forward voltage for mitigating thermal runaway.

摘要翻译： 碳化硅PiN二极管通过有限的p型接触面积具有降低的温度系数交叉点，以限制n型漂移层中的空穴注入，以便提供二极管从负温度系数偏移到正温度系数的较低电流 正向电压，用于减轻热失控。

公开(公告)号：US08445383B2

公开(公告)日：2013-05-21

申请号：US12205652

申请日：2008-09-05

申请人： Karl D. Hobart ,  Tatyana I Feygelson ,  Marko J Tadjer ,  Joshua D. Caldwell ,  Kendrick X Liu ,  Francis J. Kub ,  Michael A Mastro ,  James E Butler

发明人： Karl D. Hobart ,  Tatyana I Feygelson ,  Marko J Tadjer ,  Joshua D. Caldwell ,  Kendrick X Liu ,  Francis J. Kub ,  Michael A Mastro ,  James E Butler

IPC分类号： H01L21/302

CPC分类号： H01S5/183 ,  H01L21/0495 ,  H01L29/6606 ,  H01S5/0425 ,  H01S5/32341

摘要： A heterojunction between thin films of NCD and 4H—SiC was developed. Undoped and B-doped NCDs were deposited on both n− and p− SiC epilayers. I-V measurements on p+ NCD/n− SiC indicated Schottky rectifying behavior with a turn-on voltage of around 0.2 V. The current increased over eight orders of magnitude with an ideality factor of 1.17 at 30° C. Ideal energy-band diagrams suggested a possible conduction mechanism for electron transport from the SiC conduction band to either the valence band or acceptor level of the NCD film.

摘要翻译： 开发了NCD和4H-SiC薄膜之间的异质结。 未掺杂和B掺杂的NCD沉积在n-和p- SiC外延层上。 在p + NCD / n-SiC上的IV测量显示肖特基整流行为具有约0.2V的导通电压。电流增加超过8个数量级，在30℃下的理想因子为1.17。理想的能带图表示 从SiC导带到NCD膜的价带或受体水平的电子传输的可能传导机制。