Invention Application
- Patent Title: SENSING ENVIRONMENTAL PARAMETER THROUGH STRESS INDUCED IN IC
- Patent Title (中): 通过IC中诱发的应力感测环境参数
-
Application No.: US13057075Application Date: 2009-07-30
-
Publication No.: US20110127627A1Publication Date: 2011-06-02
- Inventor: Romano Hoofman , Remco Henricus Wilhelmus Pijnenbrug , Youri Victorovitch Ponomarev
- Applicant: Romano Hoofman , Remco Henricus Wilhelmus Pijnenbrug , Youri Victorovitch Ponomarev
- Applicant Address: NL Eindhoven
- Assignee: NXP B.V.
- Current Assignee: NXP B.V.
- Current Assignee Address: NL Eindhoven
- Priority: EP08104945.4 20080801
- International Application: PCT/IB2009/053321 WO 20090730
- Main IPC: H01L31/0352
- IPC: H01L31/0352 ; H01L29/66
Abstract:
A sensor is provided for sensing a value of a physical parameter characteristic of the sensor's environment. The sensor is implemented in semiconductor technology. A behavior of the sensor's electronic circuitry is affected by stress. The stress is induced by a film covering the circuitry or only part thereof. The stress is caused by the film's material, whose dimensions depend on a value of the parameter. This dependence is different from the 5 dependence of the circuitry's substrate on the same parameter.
Public/Granted literature
- US08872290B2 Sensing environmental parameter through stress induced in IC Public/Granted day:2014-10-28
Information query
IPC分类:
