Invention Application
US20110127641A1 SELF-ORGANIZED PIN-TYPE NANOSTRUCTURES, AND PRODUCTION THEREOF ON SILICON
有权
自组织PIN型纳米结构及其在硅上的生产
- Patent Title: SELF-ORGANIZED PIN-TYPE NANOSTRUCTURES, AND PRODUCTION THEREOF ON SILICON
- Patent Title (中): 自组织PIN型纳米结构及其在硅上的生产
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Application No.: US12089724Application Date: 2006-10-10
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Publication No.: US20110127641A1Publication Date: 2011-06-02
- Inventor: Konrad Bach , Daniel Gaebler , Michael Fischer , Mike Stubenrauch
- Applicant: Konrad Bach , Daniel Gaebler , Michael Fischer , Mike Stubenrauch
- Assignee: X-Fab Semiconductor Foundries AG,Technische Universitaet IImenau
- Current Assignee: X-Fab Semiconductor Foundries AG,Technische Universitaet IImenau
- Priority: DE102005048366.6 20051010
- International Application: PCT/EP06/67248 WO 20061010
- Main IPC: H01L49/02
- IPC: H01L49/02 ; H01L21/62 ; H01L21/027
Abstract:
By means of an RIE etch process for silicon (3), a pin-type structure (4,4a) without crystal defects is formed with high aspect ratio and with nano dimensions on the surface of silicon wafers without any additional patterning measures (e-beam, interference lithography, and the like) by selecting the gas components of the etch plasma in self-organization wherein, among others, a broadband antireflective behaviour is obtained that may be applicable in many fields.
Public/Granted literature
- US08058086B2 Self-organized pin-type nanostructures, and production thereof on silicon Public/Granted day:2011-11-15
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