发明申请
- 专利标题: POLYCRYSTALLINE DIAMOND STRUCTURE
- 专利标题(中): 多晶金刚石结构
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申请号: US12962433申请日: 2010-12-07
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公开(公告)号: US20110132667A1公开(公告)日: 2011-06-09
- 发明人: Clint Guy Smallman , Moosa Mahomed Adia , Lai Hong Lai Sang
- 申请人: Clint Guy Smallman , Moosa Mahomed Adia , Lai Hong Lai Sang
- 主分类号: E21B10/36
- IPC分类号: E21B10/36 ; B01J3/06 ; B24D3/00
摘要:
A PCD structure comprising a first region, in a state of residual compressive stress, and a second region in a state of residual tensile stress adjacent the first region; the first and second regions each formed of respective PCD grades and directly bonded to each other by intergrowth of diamond grains, the PCD grades having transverse rupture strength (TRS) of at least 1,200 MPa. A third region in a state of residual compressive stress may also be provided such that the second region is disposed between the first and third regions and is bonded to the first and third regions by intergrowth of diamond grains.
公开/授权文献
- US08590643B2 Polycrystalline diamond structure 公开/授权日:2013-11-26