Polycrystalline diamond structure
    1.
    发明授权
    Polycrystalline diamond structure 有权
    多晶金刚石结构

    公开(公告)号:US08590643B2

    公开(公告)日:2013-11-26

    申请号:US12962433

    申请日:2010-12-07

    IPC分类号: E21B10/46 E21B10/56

    摘要: A PCD structure comprising a first region, in a state of residual compressive stress, and a second region in a state of residual tensile stress adjacent the first region; the first and second regions each formed of respective PCD grades and directly bonded to each other by intergrowth of diamond grains, the PCD grades having transverse rupture strength (TRS) of at least 1,200 MPa. A third region in a state of residual compressive stress may also be provided such that the second region is disposed between the first and third regions and is bonded to the first and third regions by intergrowth of diamond grains.

    摘要翻译: 一种PCD结构,包括处于残余压缩应力状态的第一区域和处于与所述第一区域相邻的残余拉伸应力状态的第二区域; 所述第一和第二区域各自由相应的PCD等级形成并且通​​过金刚石晶粒的共生直接彼此结合,所述PCD等级具有至少1200MPa的横向断裂强度(TRS)。 还可以提供处于残余压缩应力状态的第三区域,使得第二区域设置在第一和第三区域之间,并且通过金刚石晶粒的共生结合到第一和第三区域。

    POLYCRYSTALLINE DIAMOND
    2.
    发明申请
    POLYCRYSTALLINE DIAMOND 审中-公开
    多晶金刚石

    公开(公告)号:US20120037430A1

    公开(公告)日:2012-02-16

    申请号:US13203466

    申请日:2010-03-01

    IPC分类号: E21B10/46 B24D3/00

    摘要: The invention relates to a polycrystalline diamond (PCD) body comprising PCD material having a graphitisation onset temperature, the PCD body having a working surface and comprising a first region remote from the working surface, the first region containing a catalysing material; and a second region extending a depth from the working surface into the PCD body, the second region being substantially free of catalysing material; the depth having a thermal gradient characteristic that when the temperature at the working surface is 900 degrees centigrade, the temperature at the depth is in the range from 780 degrees centigrade to 850 degrees centigrade and to inserts, machine tools and drill bits comprising the PCD body.

    摘要翻译: 本发明涉及包含具有石墨化起始温度的PCD材料的多晶金刚石(PCD)体,所述PCD体具有工作表面,并且包括远离所述工作表面的第一区域,所述第一区域含有催化材料; 以及第二区域,其从所述工作表面延伸到所述PCD主体的深度,所述第二区域基本上不含催化材料; 该深度具有热梯度特性,当工作表面的温度为900摄氏度时,深度的温度在780摄氏度至850摄氏度之间,并且包括PCD体的刀片,机床和钻头 。

    Method of cladding diamond seeds
    3.
    发明授权
    Method of cladding diamond seeds 有权
    包覆金刚石种子的方法

    公开(公告)号:US09044726B2

    公开(公告)日:2015-06-02

    申请号:US11916148

    申请日:2006-05-26

    摘要: The invention relates to a method for manufacture of diamond, the method including the steps of providing a first coating of solvent metal or solvent metal alloy on a diamond seed to create a coated diamond seed, situating the coated diamond seed adjacent a catalyst system comprising a solvent metal and/or a source of carbon, and subjecting the coated diamond seed and catalyst system to increased temperature wherein the melting point of the first coating is at least 20 deg C. below that of the catalyst system. The invention further relates to a compact comprising a plurality of diamond seeds wherein at least one seed includes a first coating comprising a solvent metal and/or solvent metal based alloy, the compact further comprising a catalyst system comprising a solvent metal and/or a source of carbon wherein the melting point of the first coating is at least 20 deg C. below that of the catalyst system.

    摘要翻译: 本发明涉及一种用于制造金刚石的方法,该方法包括以下步骤:在金刚石种子上提供溶剂金属或溶剂金属合金的第一涂层以产生涂覆的金刚石晶种,将涂覆的金刚石晶粒定位在催化剂体系附近,该催化剂体系包含 溶剂金属和/或碳源,并且使经涂覆的金刚石晶种和催化剂体系升温,其中第一涂层的熔点低于催化剂体系的熔点至少20℃。 本发明还涉及包含多个金刚石种子的压块,其中至少一种种子包括包含溶剂金属和/或溶剂金属基合金的第一涂层,所述压块还包括包含溶剂金属和/或源的催化剂体系 的碳,其中第一涂层的熔点低于催化剂体系的熔点至少20℃。

    POLYCRYSTALLINE DIAMOND STRUCTURE
    4.
    发明申请
    POLYCRYSTALLINE DIAMOND STRUCTURE 有权
    多晶金刚石结构

    公开(公告)号:US20110132667A1

    公开(公告)日:2011-06-09

    申请号:US12962433

    申请日:2010-12-07

    IPC分类号: E21B10/36 B01J3/06 B24D3/00

    摘要: A PCD structure comprising a first region, in a state of residual compressive stress, and a second region in a state of residual tensile stress adjacent the first region; the first and second regions each formed of respective PCD grades and directly bonded to each other by intergrowth of diamond grains, the PCD grades having transverse rupture strength (TRS) of at least 1,200 MPa. A third region in a state of residual compressive stress may also be provided such that the second region is disposed between the first and third regions and is bonded to the first and third regions by intergrowth of diamond grains.

    摘要翻译: 一种PCD结构,包括处于残余压缩应力状态的第一区域和处于与所述第一区域相邻的残余拉伸应力状态的第二区域; 所述第一和第二区域各自由相应的PCD等级形成并且通​​过金刚石晶粒的共生直接彼此结合,所述PCD等级具有至少1200MPa的横向断裂强度(TRS)。 还可以提供处于残余压缩应力状态的第三区域,使得第二区域设置在第一和第三区域之间,并且通过金刚石晶粒的共生结合到第一和第三区域。

    Method of Cladding Diamond Seeds
    5.
    发明申请
    Method of Cladding Diamond Seeds 有权
    包层钻石种子的方法

    公开(公告)号:US20080219914A1

    公开(公告)日:2008-09-11

    申请号:US11916148

    申请日:2006-05-26

    IPC分类号: C01B31/06 B01J3/06

    摘要: The invention relates to a method for manufacture of diamond, the method including the steps of providing a first coating of solvent metal or solvent metal alloy on a diamond seed to create a coated diamond seed, situating the coated diamond seed adjacent a catalyst system comprising a solvent metal and/or a source of carbon, and subjecting the coated diamond seed and catalyst system to increased temperature wherein the melting point of the first coating is at least 20 deg C. below that of the catalyst system. The invention further relates to a compact comprising a plurality of diamond seeds wherein at least one seed includes a first coating comprising a solvent metal and/or solvent metal based alloy, the compact further comprising a catalyst system comprising a solvent metal and/or a source of carbon wherein the melting point of the first coating is at least 20 deg C. below that of the catalyst system.

    摘要翻译: 本发明涉及一种用于制造金刚石的方法,该方法包括以下步骤:在金刚石种子上提供溶剂金属或溶剂金属合金的第一涂层以产生涂覆的金刚石晶种,将涂覆的金刚石晶粒定位在催化剂体系附近,该催化剂体系包含 溶剂金属和/或碳源,并且使经涂覆的金刚石晶种和催化剂体系升温,其中第一涂层的熔点低于催化剂体系的熔点至少20℃。 本发明还涉及包含多个金刚石种子的压块,其中至少一种种子包括包含溶剂金属和/或溶剂金属基合金的第一涂层,该压块还包括包含溶剂金属和/或源的催化剂体系 的碳,其中第一涂层的熔点低于催化剂体系的熔点至少20℃。