Invention Application
- Patent Title: SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Patent Title (中): 半导体器件及其制造方法
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Application No.: US12956152Application Date: 2010-11-30
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Publication No.: US20110133211A1Publication Date: 2011-06-09
- Inventor: Rajesh Kumar MALHAN , Naohiro Sugiyama , Yuuichi Takeuchi
- Applicant: Rajesh Kumar MALHAN , Naohiro Sugiyama , Yuuichi Takeuchi
- Applicant Address: JP KARIYA-CITY
- Assignee: DENSO CORPORATION
- Current Assignee: DENSO CORPORATION
- Current Assignee Address: JP KARIYA-CITY
- Priority: JP2009-276457 20091204
- Main IPC: H01L29/161
- IPC: H01L29/161 ; H01L29/812 ; H01L29/78 ; H01L29/80 ; H01L21/337 ; H01L21/338 ; H01L21/336
Abstract:
A wide band gap semiconductor device having a JFET, a MESFET, or a MOSFET mainly includes a semiconductor substrate, a first conductivity type semiconductor layer, and a first conductivity type channel layer. The semiconductor layer is formed on a main surface of the substrate. A recess is formed in the semiconductor layer in such a manner that the semiconductor layer is divided into a source region and a drain region. The recess has a bottom defined by the main surface of the substrate and a side wall defined by the semiconductor layer. The channel layer has an impurity concentration lower than an impurity concentration of the semiconductor layer. The channel layer is formed on the bottom and the side wall of the recess by epitaxial growth.
Public/Granted literature
- US08604540B2 Semiconductor device and method of manufacturing the same Public/Granted day:2013-12-10
Information query
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