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发明申请
US20110136317A1 Semiconductor device, method of fabricating the same, and semicondutor module, electronic circuit board, and electronic system including the device 审中-公开
半导体装置及其制造方法，半导体模块，电子电路板以及包括该装置的电子系统

Semiconductor device, method of fabricating the same, and semicondutor module, electronic circuit board, and electronic system including the device
摘要：
Example embodiments relate to a semiconductor device including an oxide dielectric layer and a non-oxide dielectric layer, a method of fabricating the device, and a semiconductor module, an electronic circuit board, and an electronic system including the device. The semiconductor device may include a lower electrode, an oxide dielectric layer disposed on the lower electrode, a non-oxide dielectric layer disposed on the oxide dielectric layer, and an upper electrode disposed on the non-oxide dielectric layer.
摘要（中）：

示例性实施例涉及包括氧化物介电层和非氧化物介电层的半导体器件，制造器件的方法，以及包括该器件的半导体模块，电子电路板和电子系统。 半导体器件可以包括下电极，设置在下电极上的氧化物介电层，设置在氧化物电介质层上的非氧化物介电层，以及设置在非氧化物介电层上的上电极。

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