摘要:
To form a dielectric layer, an organometallic precursor is adsorbed on a substrate loaded into a process chamber. The organometallic precursor includes a central metal and ligands bound to the central metal. An inactive oxidant is provided onto the substrate. The inactive oxidant is reactive with the organometallic precursor. An active oxidant is also provided onto the substrate. The active oxidant has a higher reactivity than that of the inactive oxidant.
摘要:
Semiconductor structures including a first conductive layer; a dielectric layer on the first conductive layer; a second conductive layer on the dielectric layer; and a crystallized seed layer in at least one of a first portion between the first conductive layer and the dielectric layer and a second portion between the dielectric layer and the second conductive layer. Related capacitors and methods are also provided herein.
摘要:
Trench capacitors that have insulating layer collars in undercut regions and methods of fabricating such trench capacitors are provided. Some methods of fabricating a trench capacitor include forming a first layer on a substrate. A second layer is formed on the first layer opposite to the substrate. A mask is formed that has an opening on top of the first and second layers. A first trench is formed by removing a portion of the first and second layers through the opening in the mask. A portion of the first layer under the second layer is removed to form an undercut region under the second layer. An insulating layer collar is formed in the undercut region under the second layer. A second trench is formed that extends from the first trench by removing a portion of the substrate through the opening in the mask. A buried plate is formed in the substrate along the second trench. A dielectric layer is formed on an inner wall and bottom of the second trench. A storage electrode is formed in the second trench on the dielectric layer.
摘要:
Trench capacitors that have insulating layer collars in undercut regions and methods of fabricating such trench capacitors are provided. Some methods of fabricating a trench capacitor include forming a first layer on a substrate. A second layer is formed on the first layer opposite to the substrate. A mask is formed that has an opening on top of the first and second layers. A first trench is formed by removing a portion of the first and second layers through the opening in the mask. A portion of the first layer under the second layer is removed to form an undercut region under the second layer. An insulating layer collar is formed in the undercut region under the second layer. A second trench is formed that extends from the first trench by removing a portion of the substrate through the opening in the mask. A buried plate is formed in the substrate along the second trench. A dielectric layer is formed on an inner wall and bottom of the second trench. A storage electrode is formed in the second trench on the dielectric layer.
摘要:
Trench capacitors that have insulating layer collars in undercut regions and methods of fabricating such trench capacitors are provided. Some methods of fabricating a trench capacitor include forming a first layer on a substrate. A second layer is formed on the first layer opposite to the substrate. A mask is formed that has an opening on top of the first and second layers. A first trench is formed by removing a portion of the first and second layers through the opening in the mask. A portion of the first layer under the second layer is removed to form an undercut region under the second layer. An insulating layer collar is formed in the undercut region under the second layer. A second trench is formed that extends from the first trench by removing a portion of the substrate through the opening in the mask. A buried plate is formed in the substrate along the second trench. A dielectric layer is formed on an inner wall and bottom of the second trench. A storage electrode is formed in the second trench on the dielectric layer.
摘要:
Methods for fabricating semiconductor memory devices may include forming a first conductive layer for a first electrode on a semiconductor substrate, forming a dielectric layer on the first conductive layer, and forming a second conductive layer for a second electrode on the dielectric layer. Portions of the second conductive layer and the dielectric layer can be removed, and a thermal process can be performed on the second conductive layer and the dielectric layer. The thermal process can reduce interface stress between the second conductive layer and the dielectric layer and/or cure the dielectric layer. In addition, the dielectric layer may be maintained in an amorphous state during and after the thermal process.
摘要:
Methods for fabricating semiconductor memory devices may include forming a first conductive layer for a first electrode on a semiconductor substrate, forming a dielectric layer on the first conductive layer, and forming a second conductive layer for a second electrode on the dielectric layer. Portions of the second conductive layer and the dielectric layer can be removed, and a thermal process can be performed on the second conductive layer and the dielectric layer. The thermal process can reduce interface stress between the second conductive layer and the dielectric layer and/or cure the dielectric layer. In addition, the dielectric layer may be maintained in an amorphous state during and after the thermal process.
摘要:
Provided are 1) a method for forming a ruthenium film under a single process condition, whereby high adhesion of the ruthenium film to a lower layer is maintained, and 2) a method for manufacturing an metal-insulator-metal (MIM) capacitor using the ruthenium film forming method. The method for forming a ruthenium film includes supplying bis(isoheptane-2,4-dionato)norbornadiene ruthenium at a flow rate of 0.2–1 ccm and oxygen at a flow rate of 20–60 sccm, and depositing the ruthenium film at a temperature of 330–430° C. under a pressure of 0.5–5 Torr using chemical vapor deposition (CVD).
摘要:
To form a dielectric layer, an organometallic precursor is adsorbed on a substrate loaded into a process chamber. The organometallic precursor includes a central metal and ligands bound to the central metal. An inactive oxidant is provided onto the substrate. The inactive oxidant is reactive with the organometallic precursor. An active oxidant is also provided onto the substrate. The active oxidant has a higher reactivity than that of the inactive oxidant.
摘要:
Provided are a semiconductor device, a method of fabricating the same, and a semiconductor module, an electronic circuit board, and an electronic system including the device. The semiconductor device includes a lower electrode, a rutile state lower vanadium dioxide layer on the lower electrode, a rutile state titanium oxide on the lower vanadium dioxide layer, and an upper electrode on the titanium oxide layer.