发明申请
US20110140194A1 Enhancing Schottky breakdown voltage (BV) without affecting an integrated Mosfet-Schottky device layout
有权
增强肖特基击穿电压（BV），而不影响集成的Mosfet-Schottky器件布局
- 专利标题： Enhancing Schottky breakdown voltage (BV) without affecting an integrated Mosfet-Schottky device layout
- 专利标题（中）： 增强肖特基击穿电压（BV），而不影响集成的Mosfet-Schottky器件布局
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申请号： US12932163申请日： 2011-02-17
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公开(公告)号： US20110140194A1公开(公告)日： 2011-06-16
- 发明人: Anup Bhalla , Xiaobin Wang , Moses Ho
- 申请人： Anup Bhalla , Xiaobin Wang , Moses Ho
- 主分类号： H01L27/06
- IPC分类号： H01L27/06 ; H01L21/8234
摘要：
This invention discloses a semiconductor power device that includes an active cell area having a plurality of power transistor cells. Each of said power transistor cells has a planar Schottky diode that includes a Schottky junction barrier metal covering areas above gaps between separated body regions between two adjacent power transistor cells. The separated body regions further provide a function of adjusting a leakage current of said Schottky diode in each of said power transistor cells. Each of the planar Schottky diodes further includes a Shannon implant region disposed in a gap between the separated body regions of two adjacent power transistor cells for further adjusting a leakage current of said Schottky diode. Each of the power transistor cells further includes heavy body doped regions in the separated body regions next to source regions surrounding said Schottky diode forming a junction barrier Schottky (JBS) pocket region.
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