发明申请
- 专利标题： EMBEDDED BIT LINE STRUCTURE, FIELD EFFECT TRANSISTOR STRUCTURE WITH THE SAME AND METHOD OF FABRICATING THE SAME
- 专利标题（中）： 嵌入式位线结构，场效应晶体管结构及其制作方法
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申请号： US12635662申请日： 2009-12-10
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公开(公告)号： US20110140196A1公开(公告)日： 2011-06-16
- 发明人: Shing-Hwa Renn , Cheng-Chih Huang , Yung-Meng Huang
- 申请人： Shing-Hwa Renn , Cheng-Chih Huang , Yung-Meng Huang
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/06 ; H01L21/336
摘要：
An embedded bit line structure, in which, a substrate includes an insulator layer having an original top surface and a semiconductor layer on the original top surface of the insulator layer, and a bit line is disposed within the lower portion of the trench along one side of an active area. The bit line includes a first portion and a second portion. The first portion is located within the insulator layer and below the original top surface of the insulator layer. The second portion is disposed on the first portion to electrically connect the semiconductor layer of the active area. An insulator liner is disposed on the first portion of the bit line and between the second portion of the bit line and the semiconductor layer of the substrate opposite the active area for isolation. An STI is disposed within the trench to surround the active area for isolation.
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