发明申请
- 专利标题： METHOD FOR DEPOSITING GRAPHENE FILM
- 专利标题（中）： 沉积石墨膜的方法
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申请号： US12829381申请日： 2010-07-01
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公开(公告)号： US20110143034A1公开(公告)日： 2011-06-16
- 发明人: Seongdeok Ahn , Seung Youl Kang
- 申请人： Seongdeok Ahn , Seung Youl Kang
- 申请人地址： KR Daejeon
- 专利权人： Electronics and Telecommunications Research Institute
- 当前专利权人： Electronics and Telecommunications Research Institute
- 当前专利权人地址： KR Daejeon
- 优先权： KR10-2009-0123339 20091211
- 主分类号： C23C16/26
- IPC分类号： C23C16/26
摘要：
Provided is a method of depositing a graphene film. In the method includes supplying a gaseous-phase graphene source to a substrate, forming an adsorbed layer on the substrate by the graphene source, and activating the adsorbed layer by heating the adsorbed layer. Therefore, a uniform graphene film having a large area can be formed.