发明申请
- 专利标题： HYBRID INTEGRATED CIRCUIT DEVICE
- 专利标题（中）： 混合集成电路设备
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申请号： US13038746申请日： 2011-03-02
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公开(公告)号： US20110147949A1公开(公告)日： 2011-06-23
- 发明人: James Karp , Steven P. Young , Bernard J. New , Scott S. Nance , Patrick J. Crotty
- 申请人： James Karp , Steven P. Young , Bernard J. New , Scott S. Nance , Patrick J. Crotty
- 申请人地址： US CA San Jose
- 专利权人： XILINX, INC.
- 当前专利权人： XILINX, INC.
- 当前专利权人地址： US CA San Jose
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L21/50
摘要：
An embodiment of a method to form a hybrid integrated circuit device is described. This embodiment of the method comprises: forming a first die using a first lithography, where the first die is on a substrate; and forming a second die using a second lithography, where the second die is on the first die. The first lithography used to form the first die is a larger lithography than the second lithography used to form the second die. The first die is an IO die.
公开/授权文献
- US08293547B2 Hybrid integrated circuit device 公开/授权日：2012-10-23
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