发明申请
- 专利标题: CAPACITIVE TRANSDUCER AND FABRICATION METHOD
- 专利标题(中): 电容式传感器和制造方法
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申请号: US12643417申请日: 2009-12-21
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公开(公告)号: US20110150261A1公开(公告)日: 2011-06-23
- 发明人: Tzong-Che HO , Lung-Tai Chen , Yao-Jung Lee , Chao-Ta Huang , Li-Chi Pan , Yu-Sheng Hsieh
- 申请人: Tzong-Che HO , Lung-Tai Chen , Yao-Jung Lee , Chao-Ta Huang , Li-Chi Pan , Yu-Sheng Hsieh
- 申请人地址: TW Hsinchu
- 专利权人: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- 当前专利权人: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- 当前专利权人地址: TW Hsinchu
- 优先权: TW98143286 20091217
- 主分类号: H04R9/08
- IPC分类号: H04R9/08 ; H01G7/00
摘要:
A capacitive transducer and fabrication method are disclosed. The capacitive transducer includes a substrate, a first electrode mounted on the substrate, a cap having a through-hole and a cavity beside the through-hole, a second electrode mounted on the cap across the through-hole. The second electrode is deformable in response to pressure fluctuations applied thereto via the through-hole and defines, together with the first electrode, as a capacitor. The capacitor includes a capacitance variable with the pressure fluctuations and the cavity defines a back chamber for the deformable second electrode.
公开/授权文献
- US08693711B2 Capacitive transducer and fabrication method 公开/授权日:2014-04-08
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