发明申请
US20110151227A1 HIGH-K DIELECTRIC FILMS AND METHODS OF PRODUCING USING TITANIUM-BASED B-DIKETONATE PRECURSORS
审中-公开
高K电介质薄膜和使用钛酸钡的二氧化硅前体的生产方法
- 专利标题： HIGH-K DIELECTRIC FILMS AND METHODS OF PRODUCING USING TITANIUM-BASED B-DIKETONATE PRECURSORS
- 专利标题（中）： 高K电介质薄膜和使用钛酸钡的二氧化硅前体的生产方法
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申请号： US12992942申请日： 2009-05-22
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公开(公告)号： US20110151227A1公开(公告)日： 2011-06-23
- 发明人: Paul Raymond Chalker , Peter Nicholas Heys
- 申请人： Paul Raymond Chalker , Peter Nicholas Heys
- 申请人地址： US MO St. Louis
- 专利权人： SIGMA-ALDRICH CO.
- 当前专利权人： SIGMA-ALDRICH CO.
- 当前专利权人地址： US MO St. Louis
- 国际申请： PCT/US09/45039 WO 20090522
- 主分类号： C04B35/48
- IPC分类号： C04B35/48 ; B32B15/02 ; H01L21/31
摘要：
Methods are provided to form and stabilize high-κ dielectric films by vapor deposition processes using metal-source precursors and titanium-based β-diketonate precursors according to Formula I: Ti(L)x wherein: L is a β-diketonate; and x is 3 or 4. Further provided are methods of improving high-κ gate property of semiconductor devices by using titanium precursors according to Formula I. High-κ dielectric film-forming lattices are also provided comprising titanium precursors according to Formula I.
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