发明申请
- 专利标题： APPARATUS AND METHOD FOR LOW-K DIELECTRIC REPAIR
- 专利标题（中）： 低K电介质修复的装置和方法
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申请号： US12846664申请日： 2010-07-29
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公开(公告)号： US20110151590A1公开(公告)日： 2011-06-23
- 发明人: James D. Carducci , Srinivas D. Nemani , Hairong Tang , Hui Sun , Igor Markovsky , Ezra R. Gold , Iwalani S. Kaya , Ellie Y. Yieh , Chunlei Zhang , Kenneth S. Collins , Michael D. Armacost , Ajit Balakrishna , Thorsten B. Lill
- 申请人： James D. Carducci , Srinivas D. Nemani , Hairong Tang , Hui Sun , Igor Markovsky , Ezra R. Gold , Iwalani S. Kaya , Ellie Y. Yieh , Chunlei Zhang , Kenneth S. Collins , Michael D. Armacost , Ajit Balakrishna , Thorsten B. Lill
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; C23C16/50 ; H01L21/465
摘要：
A method, a system and a computer readable medium for integrated in-vacuo repair of low-k dielectric thin films damaged by etch and/or strip processing. A repair chamber is integrated onto a same platform as a plasma etch and/or strip chamber to repair a low-k dielectric thin film without breaking vacuum between the damage event and the repair event. UV radiation may be provided on the integrated etch/repair platform in any combination of before, after, or during the low-k repair treatment to increase efficacy of the repair treatment and/or stability of repair.
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