公开(公告)号：US20110151590A1

公开(公告)日：2011-06-23

申请号：US12846664

申请日：2010-07-29

申请人： James D. Carducci ,  Srinivas D. Nemani ,  Hairong Tang ,  Hui Sun ,  Igor Markovsky ,  Ezra R. Gold ,  Iwalani S. Kaya ,  Ellie Y. Yieh ,  Chunlei Zhang ,  Kenneth S. Collins ,  Michael D. Armacost ,  Ajit Balakrishna ,  Thorsten B. Lill

发明人： James D. Carducci ,  Srinivas D. Nemani ,  Hairong Tang ,  Hui Sun ,  Igor Markovsky ,  Ezra R. Gold ,  Iwalani S. Kaya ,  Ellie Y. Yieh ,  Chunlei Zhang ,  Kenneth S. Collins ,  Michael D. Armacost ,  Ajit Balakrishna ,  Thorsten B. Lill

IPC分类号： H01L21/00 ,  C23C16/50 ,  H01L21/465

CPC分类号： H01L21/3105 ,  H01L21/31058 ,  H01L21/67167 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76831

摘要： A method, a system and a computer readable medium for integrated in-vacuo repair of low-k dielectric thin films damaged by etch and/or strip processing. A repair chamber is integrated onto a same platform as a plasma etch and/or strip chamber to repair a low-k dielectric thin film without breaking vacuum between the damage event and the repair event. UV radiation may be provided on the integrated etch/repair platform in any combination of before, after, or during the low-k repair treatment to increase efficacy of the repair treatment and/or stability of repair.

摘要翻译： 一种用于通过蚀刻和/或条带处理损坏的低k电介质薄膜的真正真正修复的方法，系统和计算机可读介质。 修复室与等离子体蚀刻和/或剥离室集成在相同的平台上，以修复低k电介质薄膜，而不破坏损坏事件和修复事件之间的真空。 紫外线辐射可以在低k修复处理之前，之后或期间以任何组合提供在集成蚀刻/修复平台上，以增加修复处理的效力和/或修复的稳定性。

公开(公告)号：US07943531B2

公开(公告)日：2011-05-17

申请号：US11876664

申请日：2007-10-22

申请人： Srinivas D. Nemani ,  Abhijit Basu Mallick ,  Ellie Y. Yieh

发明人： Srinivas D. Nemani ,  Abhijit Basu Mallick ,  Ellie Y. Yieh

IPC分类号： H01L21/469

CPC分类号： H01L21/31612 ,  C23C16/045 ,  C23C16/401 ,  C23C16/452 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02216 ,  H01L21/02222 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/3122 ,  H01L21/31633

摘要： A method of depositing a silicon oxide layer over a substrate includes providing a substrate to a deposition chamber. A first silicon-containing precursor, a second silicon-containing precursor and a NH3 plasma are reacted to form a silicon oxide layer. The first silicon-containing precursor includes at least one of Si—H bond and Si—Si bond. The second silicon-containing precursor includes at least one Si—N bond. The deposited silicon oxide layer is annealed.

摘要翻译： 在衬底上沉积氧化硅层的方法包括向沉积室提供衬底。 第一含硅前体，第二含硅前体和NH 3等离子体反应形成氧化硅层。 第一含硅前体包括Si-H键和Si-Si键中的至少一种。 第二含硅前体包括至少一个Si-N键。 沉积的氧化硅层退火。

公开(公告)号：US20090208880A1

公开(公告)日：2009-08-20

申请号：US12034000

申请日：2008-02-20

申请人： SRINIVAS D. NEMANI ,  Shankar Venkataraman ,  Ellie Y. Yieh

发明人： SRINIVAS D. NEMANI ,  Shankar Venkataraman ,  Ellie Y. Yieh

IPC分类号： G03F7/00 ,  C23F1/00

CPC分类号： G03F7/0757 ,  H01L21/02164 ,  H01L21/3086 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31612 ,  H01L21/6719 ,  H01L21/67207

摘要： Method and systems for patterning a hardmask film using ultraviolet light is disclosed according to one embodiment of the invention. Embodiments of the present invention alleviate the processing problem of depositing and etching photoresist in order to produce a hardmask pattern. A hardmask layer, such as, silicon oxide, is first deposited on a substrate within a deposition chamber. In some cases, the hardmask layer is baked or annealed following deposition. After which, portions of the hardmask layer are exposed with ultraviolet light. The ultraviolet light produces a pattern of exposed and unexposed portions of hardmask material. Following the exposure, an etching process, such as a wet etch, may occur that removes the unexposed portions of the hardmask. Following the etch, the hardmask may be annealed, baked or subjected to a plasma treatment.

摘要翻译： 根据本发明的一个实施方案公开了使用紫外光图案化硬掩膜的方法和系统。 本发明的实施例减轻了沉积和蚀刻光刻胶的处理问题，以产生硬掩模图案。 首先将诸如氧化硅的硬掩模层沉积在沉积室内的衬底上。 在一些情况下，硬掩模层在沉积之后被烘烤或退火。 之后，硬掩模层的一部分用紫外线照射。 紫外光产生硬掩模材料的暴露和未曝光部分的图案。 曝光后，可能会发生腐蚀过程，例如湿蚀刻，从而去除硬掩模的未曝光部分。 在蚀刻之后，可以对硬掩模进行退火，烘烤或进行等离子体处理。

公开(公告)号：US08153348B2

公开(公告)日：2012-04-10

申请号：US12034000

申请日：2008-02-20

申请人： Srinivas D. Nemani ,  Shankar Venkataraman ,  Ellie Y. Yieh

发明人： Srinivas D. Nemani ,  Shankar Venkataraman ,  Ellie Y. Yieh

IPC分类号： G03F7/26

CPC分类号： G03F7/0757 ,  H01L21/02164 ,  H01L21/3086 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31612 ,  H01L21/6719 ,  H01L21/67207

摘要： Method and systems for patterning a hardmask film using ultraviolet light is disclosed according to one embodiment of the invention. Embodiments of the present invention alleviate the processing problem of depositing and etching photoresist in order to produce a hardmask pattern. A hardmask layer, such as, silicon oxide, is first deposited on a substrate within a deposition chamber. In some cases, the hardmask layer is baked or annealed following deposition. After which, portions of the hardmask layer are exposed with ultraviolet light. The ultraviolet light produces a pattern of exposed and unexposed portions of hardmask material. Following the exposure, an etching process, such as a wet etch, may occur that removes the unexposed portions of the hardmask. Following the etch, the hardmask may be annealed, baked or subjected to a plasma treatment.

摘要翻译： 根据本发明的一个实施方案公开了使用紫外光图案化硬掩膜的方法和系统。 本发明的实施例减轻了沉积和蚀刻光刻胶的处理问题，以产生硬掩模图案。 首先将诸如氧化硅的硬掩模层沉积在沉积室内的衬底上。 在一些情况下，硬掩模层在沉积之后被烘烤或退火。 之后，硬掩模层的一部分用紫外线照射。 紫外光产生硬掩模材料的暴露和未曝光部分的图案。 曝光后，可能会发生腐蚀过程，例如湿蚀刻，从而去除硬掩模的未曝光部分。 在蚀刻之后，可以对硬掩模进行退火，烘烤或进行等离子体处理。

公开(公告)号：US07524750B2

公开(公告)日：2009-04-28

申请号：US11553772

申请日：2006-10-27

申请人： Srinivas D. Nemani ,  Young S. Lee ,  Ellie Y. Yieh ,  Anchuan Wang ,  Jason Thomas Bloking ,  Lung-Tien Han

发明人： Srinivas D. Nemani ,  Young S. Lee ,  Ellie Y. Yieh ,  Anchuan Wang ,  Jason Thomas Bloking ,  Lung-Tien Han

IPC分类号： H01L21/20

CPC分类号： H01L21/76224

摘要： A process is provided for depositing an silicon oxide film on a substrate disposed in a process chamber. A process gas that includes a halogen source, a fluent gas, a silicon source, and an oxidizing gas reactant is flowed into the process chamber. A plasma having an ion density of at least 1011 ions/cm3 is formed from the process gas. The silicon oxide film is deposited over the substrate with a halogen concentration less than 1.0%. The silicon oxide film is deposited with the plasma using a process that has simultaneous deposition and sputtering components. The flow rate of the halogen source to the process chamber to the flow rate of the silicon source to the process chamber is substantially between 0.5 and 3.0.

摘要翻译： 提供了一种在设置在处理室中的衬底上沉积氧化硅膜的工艺。 包括卤素源，流动气体，硅源和氧化性气体反应物的处理气体流入处理室。 从处理气体形成具有至少1011个离子/ cm 3的离子密度的等离子体。 氧化硅膜以低于1.0％的卤素浓度沉积在衬底上。 使用具有同时沉积和溅射组分的工艺，用等离子体沉积氧化硅膜。 卤素源到处理室的流速与硅源到处理室的流速基本上在0.5和3.0之间。

公开(公告)号：US20090104789A1

公开(公告)日：2009-04-23

申请号：US11876541

申请日：2007-10-22

申请人： Abhijit Basu Mallick ,  Jeffrey C. Munro ,  Linlin Wang ,  Srinivas D. Nemani ,  Yi Zheng ,  Zheng Yuan ,  Dimitry Lubomirsky ,  Ellie Y. Yieh

发明人： Abhijit Basu Mallick ,  Jeffrey C. Munro ,  Linlin Wang ,  Srinivas D. Nemani ,  Yi Zheng ,  Zheng Yuan ,  Dimitry Lubomirsky ,  Ellie Y. Yieh

IPC分类号： H01L21/31

CPC分类号： H01L21/31612 ,  C23C16/045 ,  C23C16/24 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/76837

摘要： A method of forming a silicon oxide layer on a substrate. The method includes providing a substrate and forming a first silicon oxide layer overlying at least a portion of the substrate, the first silicon oxide layer including residual water, hydroxyl groups, and carbon species. The method further includes exposing the first silicon oxide layer to a plurality of silicon-containing species to form a plurality of amorphous silicon components being partially intermixed with the first silicon oxide layer. Additionally, the method includes annealing the first silicon oxide layer partially intermixed with the plurality of amorphous silicon components in an oxidative environment to form a second silicon oxide layer on the substrate. At least a portion of amorphous silicon components are oxidized to become part of the second silicon oxide layer and unreacted residual hydroxyl groups and carbon species in the second silicon oxide layer are substantially removed.

摘要翻译： 在基板上形成氧化硅层的方法。 该方法包括提供衬底并形成覆盖衬底的至少一部分的第一氧化硅层，第一氧化硅层包括残留的水，羟基和碳类。 该方法还包括将第一氧化硅层暴露于多个含硅物质以形成与第一氧化硅层部分混合的多个非晶硅组分。 此外，该方法包括在氧化环境中将与多个非晶硅组分部分混合的第一氧化硅层退火以在衬底上形成第二氧化硅层。 至少一部分非晶硅组分被氧化成第二氧化硅层的一部分，并且基本上去除了第二氧化硅层中未反应的残余羟基和碳物质。

公开(公告)号：US20070243693A1

公开(公告)日：2007-10-18

申请号：US11553772

申请日：2006-10-27

申请人： Srinivas D. Nemani ,  Young S. Lee ,  Ellie Y. Yieh ,  Anchuan Wang ,  Jason Thomas Bloking ,  Lung-Tien Han

发明人： Srinivas D. Nemani ,  Young S. Lee ,  Ellie Y. Yieh ,  Anchuan Wang ,  Jason Thomas Bloking ,  Lung-Tien Han

IPC分类号： H01L21/76

CPC分类号： H01L21/76224

摘要： A process is provided for depositing an silicon oxide film on a substrate disposed in a process chamber. A process gas that includes a halogen source, a fluent gas, a silicon source, and an oxidizing gas reactant is flowed into the process chamber. A plasma having an ion density of at least 1011 ions/cm3 is formed from the process gas. The silicon oxide film is deposited over the substrate with a halogen concentration less than 1.0%. The silicon oxide film is deposited with the plasma using a process that has simultaneous deposition and sputtering components. The flow rate of the halogen source to the process chamber to the flow rate of the silicon source to the process chamber is substantially between 0.5 and 3.0.

摘要翻译： 提供了一种在设置在处理室中的衬底上沉积氧化硅膜的工艺。 包括卤素源，流动气体，硅源和氧化性气体反应物的处理气体流入处理室。 从处理气体形成离子密度为至少10 11个/ cm 3的等离子体。 氧化硅膜以低于1.0％的卤素浓度沉积在衬底上。 使用具有同时沉积和溅射组分的工艺，用等离子体沉积氧化硅膜。 卤素源到处理室的流速与硅源到处理室的流速基本上在0.5和3.0之间。

公开(公告)号：US08101525B2

公开(公告)日：2012-01-24

申请号：US12371085

申请日：2009-02-13

申请人： Meihua Shen ,  Noel Sun ,  Nicolas Gani ,  Han-Hsiang Chen ,  Eric Pei ,  Weimin Zeng ,  Thorsten B. Lill ,  Uday Mitra ,  Ellie Y. Yieh

发明人： Meihua Shen ,  Noel Sun ,  Nicolas Gani ,  Han-Hsiang Chen ,  Eric Pei ,  Weimin Zeng ,  Thorsten B. Lill ,  Uday Mitra ,  Ellie Y. Yieh

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/31122 ,  H01L21/28123 ,  H01L21/28167 ,  H01L21/31105 ,  H01L21/31111 ,  H01L21/32139 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517

摘要： Methods for fabricating a semiconductor device having a lanthanum-family-based oxide layer are described. A gate stack having a lanthanum-family-based oxide layer is provided above a substrate. At least a portion of the lanthanum-family-based oxide layer is modified to form a lanthanum-family-based halide portion. The lanthanum-family-based halide portion is removed with a water vapor treatment.

摘要翻译： 描述了制造具有镧族氧化物层的半导体器件的方法。 具有镧族氧化物层的栅极叠层设置在基板的上方。 镧族氧化物层的至少一部分被改性以形成镧族卤化物部分。 用水蒸气处理除去镧族卤化物部分。

公开(公告)号：US20100210112A1

公开(公告)日：2010-08-19

申请号：US12371085

申请日：2009-02-13

申请人： Meihua Shen ,  Noel Sun ,  Nicolas Gani ,  Han-Hsiang Chen ,  Eric Pei ,  Weimin Zeng ,  Thorsten B. Lill ,  Uday Mitra ,  Ellie Y. Yieh

发明人： Meihua Shen ,  Noel Sun ,  Nicolas Gani ,  Han-Hsiang Chen ,  Eric Pei ,  Weimin Zeng ,  Thorsten B. Lill ,  Uday Mitra ,  Ellie Y. Yieh

IPC分类号： H01L21/3065

CPC分类号： H01L21/31122 ,  H01L21/28123 ,  H01L21/28167 ,  H01L21/31105 ,  H01L21/31111 ,  H01L21/32139 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517

摘要： Methods for fabricating a semiconductor device having a lanthanum-family-based oxide layer are described. A gate stack having a lanthanum-family-based oxide layer is provided above a substrate. At least a portion of the lanthanum-family-based oxide layer is modified to form a lanthanum-family-based halide portion. The lanthanum-family-based halide portion is removed with a water vapor treatment.

摘要翻译： 描述了制造具有镧族氧化物层的半导体器件的方法。 具有镧族氧化物层的栅极叠层设置在基板的上方。 镧族氧化物层的至少一部分被改性以形成镧族卤化物部分。 用水蒸气处理除去镧族卤化物部分。

公开(公告)号：US07541297B2

公开(公告)日：2009-06-02

申请号：US11876541

申请日：2007-10-22

申请人： Abhijit Basu Mallick ,  Jeffrey C. Munro ,  Linlin Wang ,  Srinivas D. Nemani ,  Yi Zheng ,  Zheng Yuan ,  Dimitry Lubomirsky ,  Ellie Y. Yieh

发明人： Abhijit Basu Mallick ,  Jeffrey C. Munro ,  Linlin Wang ,  Srinivas D. Nemani ,  Yi Zheng ,  Zheng Yuan ,  Dimitry Lubomirsky ,  Ellie Y. Yieh

IPC分类号： H01L21/469 ,  H01L21/31

CPC分类号： H01L21/31612 ,  C23C16/045 ,  C23C16/24 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/76837

摘要： A method of forming a silicon oxide layer on a substrate. The method includes providing a substrate and forming a first silicon oxide layer overlying at least a portion of the substrate, the first silicon oxide layer including residual water, hydroxyl groups, and carbon species. The method further includes exposing the first silicon oxide layer to a plurality of silicon-containing species to form a plurality of amorphous silicon components being partially intermixed with the first silicon oxide layer. Additionally, the method includes annealing the first silicon oxide layer partially intermixed with the plurality of amorphous silicon components in an oxidative environment to form a second silicon oxide layer on the substrate. At least a portion of amorphous silicon components are oxidized to become part of the second silicon oxide layer and unreacted residual hydroxyl groups and carbon species in the second silicon oxide layer are substantially removed.

摘要翻译： 在基板上形成氧化硅层的方法。 该方法包括提供衬底并形成覆盖衬底的至少一部分的第一氧化硅层，第一氧化硅层包括残留的水，羟基和碳类。 该方法还包括将第一氧化硅层暴露于多个含硅物质以形成与第一氧化硅层部分混合的多个非晶硅组分。 此外，该方法包括在氧化环境中将与多个非晶硅组分部分混合的第一氧化硅层退火以在衬底上形成第二氧化硅层。 至少一部分非晶硅组分被氧化成第二氧化硅层的一部分，并且基本上去除了第二氧化硅层中未反应的残余羟基和碳物质。