发明申请
- 专利标题: METHOD FOR MANUFACTURING BONDED WAFER
- 专利标题(中): 制造粘结波的方法
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申请号: US13060558申请日: 2009-08-04
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公开(公告)号: US20110151643A1公开(公告)日: 2011-06-23
- 发明人: Norihiro Kobayashi , Hiroji Aga , Tohru Ishizuka
- 申请人: Norihiro Kobayashi , Hiroji Aga , Tohru Ishizuka
- 申请人地址: JP TOKYO
- 专利权人: SHIN-ETSU HANDOTAI CO., LTD.
- 当前专利权人: SHIN-ETSU HANDOTAI CO., LTD.
- 当前专利权人地址: JP TOKYO
- 优先权: JP2008-241378 20080919
- 国际申请: PCT/JP2009/003708 WO 20090804
- 主分类号: H01L21/762
- IPC分类号: H01L21/762
摘要:
A method for manufacturing a bonded wafer by forming an ion implanted layer in a bond wafer; bonding an ion implanted surface of the bond wafer to a surface of a base wafer directly or through a silicon oxide film; and performing a delamination heat treatment. After the formation of the ion implanted layer and before the bonding, a plasma treatment is carried out with respect to a bonding surface of at least one of the bond wafer and the base wafer. The delamination heat treatment is carried out at a fixed temperature by directly putting the bonded wafer into a heat-treating furnace whose furnace temperature is set to the fixed temperature less than 475° C. without a temperature increasing step.