发明申请
US20110157978A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF READING DATA FROM NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
有权
非易失性半导体存储器件和从非易失性半导体存储器件读取数据的方法
- 专利标题： NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF READING DATA FROM NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
- 专利标题（中）： 非易失性半导体存储器件和从非易失性半导体存储器件读取数据的方法
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申请号： US12976355申请日： 2010-12-22
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公开(公告)号： US20110157978A1公开(公告)日： 2011-06-30
- 发明人: Naoharu Shinozaki , Masao Taguchi , Satoru Sugimoto
- 申请人： Naoharu Shinozaki , Masao Taguchi , Satoru Sugimoto
- 申请人地址： JP Tokyo
- 专利权人： Elpida Memory, Inc.
- 当前专利权人： Elpida Memory, Inc.
- 当前专利权人地址： JP Tokyo
- 优先权： JP2009-296543 20091226
- 主分类号： G11C16/26
- IPC分类号： G11C16/26 ; G11C16/04
摘要：
At the time of reading, an unselected word line voltage is fixed to a first predetermined voltage (0 V or 3 V), and when selecting a word line, a selected word line voltage is set to a second predetermined voltage (−3.5 V or 0 V). This configuration eliminates an application of a pulsed voltage to the word line at the time of reading, making it possible to reduce an influence of read disturbance. In addition, even when a voltage in a range from a power source voltage to a ground voltage or a voltage over the power source voltage is required at the time of reading, it becomes a voltage about 1.5 times an absolute value of the power source voltage. Therefore, a voltage step-up circuit having a large number of stages is not required, and as a result, it is possible to achieve a reduced operation time with a low power consumption.
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