- 专利标题： Polycrystalline silicon as an electrode for a light emitting diode and method of making the same
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申请号： US13043135申请日： 2011-03-08
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公开(公告)号： US20110159610A1公开(公告)日： 2011-06-30
- 发明人: Hoi Sing Kwok , Man Wong , Zhiguo Meng , Jiaxin Sun , Xiuling Zhu
- 申请人： Hoi Sing Kwok , Man Wong , Zhiguo Meng , Jiaxin Sun , Xiuling Zhu
- 申请人地址： CN Hong Kong
- 专利权人： The Hong Kong University of Science and Technology
- 当前专利权人： The Hong Kong University of Science and Technology
- 当前专利权人地址： CN Hong Kong
- 主分类号： H01L33/00
- IPC分类号： H01L33/00
摘要：
Metal induced polycrystallized silicon is used as the anode in a light emitting device, such as an OLED or AMOLED. The polycrystallized silicon is sufficiently non-absorptive, transparent and made sufficiently conductive for this purpose. A thin film transistor can be formed onto the polycrystallized silicon anode, with the silicon anode acting as the drain of the thin film transistor, thereby simplifying production.