发明申请
- 专利标题： Semiconductor Device and Method For Manufacturing Semiconductor Device
- 专利标题（中）： 半导体器件及半导体器件制造方法
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申请号： US13050002申请日： 2011-03-17
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公开(公告)号： US20110165740A1公开(公告)日： 2011-07-07
- 发明人: Toru Takayama , Kengo Akimoto
- 申请人： Toru Takayama , Kengo Akimoto
- 申请人地址： JP Kanagawa-ken
- 专利权人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人地址： JP Kanagawa-ken
- 优先权： JP2007-325708 20071218
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/20
摘要：
An object is to provide a semiconductor device including a microcrystalline semiconductor film with favorable quality and a method for manufacturing the semiconductor device. In a thin film transistor formed using a microcrystalline semiconductor film, yttria-stabilized zirconia having a fluorite structure is formed in the uppermost layer of a gate insulating film in order to improve quality of a microcrystalline semiconductor film to be formed in the initial stage of deposition. The microcrystalline semiconductor film is deposited on the yttria-stabilized zirconia, so that the microcrystalline semiconductor film around an interface with a base particularly has favorable crystallinity while by crystallinity of the base.
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