发明申请
- 专利标题: CONTACT STRUCTURE AND SEMICONDUCTOR DEVICE
- 专利标题(中): 接触结构和半导体器件
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申请号: US13052337申请日: 2011-03-21
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公开(公告)号: US20110169003A1公开(公告)日: 2011-07-14
- 发明人: Shunpei YAMAZAKI
- 申请人: Shunpei YAMAZAKI
- 申请人地址: JP Atsugi
- 专利权人: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人地址: JP Atsugi
- 优先权: JP11-207041 19990722
- 主分类号: H01L33/08
- IPC分类号: H01L33/08
摘要:
To improve the reliability of contact with an anisotropic conductive film in a semiconductor device such as a liquid crystal display panel, a terminal portion (182) of a connecting wiring (183) on an active matrix substrate is electrically connected to an FPC (191) by an anisotropic conductive film (195). The connecting wiring (183) is manufactured in the same process with a source/drain wiring of a TFT on the active matrix substrate, and is made of a lamination film of a metallic film and a transparent conductive film. In the connecting portion with the anisotropic conductive film (195), a side surface of the connecting wiring (183) is covered with a protecting film (173) made of an insulating material. Accordingly, the portion in which the metallic film is surrounded by the transparent conductive film, the insulating base film, and the protecting film (173) to which it is in contact with, can be avoided from exposure to air because the side surface of the metallic film of the connecting wiring is covered with the protecting film (173).
公开/授权文献
- US08258515B2 Contact structure and semiconductor device 公开/授权日:2012-09-04