利索-全球专利检索

  1. 登录
  2. 注册
发明申请
US20110169086A1 Methods of Forming Field Effect Transistors, Pluralities of Field Effect Transistors, and DRAM Circuitry Comprising a Plurality of Individual Memory Cells 有权
形成场效应晶体管的方法，多个场效应晶体管和包含多个存储单元的DRAM电路

Methods of Forming Field Effect Transistors, Pluralities of Field Effect Transistors, and DRAM Circuitry Comprising a Plurality of Individual Memory Cells
摘要：
A method of forming a field effect transistor includes forming trench isolation material within a semiconductor substrate and on opposing sides of a semiconductor material channel region along a length of the channel region. The trench isolation material is formed to comprise opposing insulative projections extending toward one another partially under the channel region along the channel length and with semiconductor material being received over the projections. The trench isolation material is etched to expose opposing sides of the semiconductor material along the channel length. The exposed opposing sides of the semiconductor material are etched along the channel length to form a channel fin projecting upwardly relative to the projections. A gate is formed over a top and opposing sides of the fin along the channel length. Other methods and structures are disclosed.
摘要（中）：

形成场效应晶体管的方法包括在半导体衬底内形成沟槽隔离材料，并在沟道区的长度上在半导体材料沟道区的相对侧上形成沟道隔离材料。 沟槽隔离材料形成为包括沿着沟道长度部分地在沟道区域下方朝向彼此延伸的相对的绝缘突起，并且半导体材料被接收在突起上。 蚀刻沟槽隔离材料以沿着沟道长度露出半导体材料的相对侧。 半导体材料的暴露的相对侧沿通道长度被蚀刻以形成相对于突出部向上突出的通道翅片。 栅极沿着沟道长度形成在鳍的顶部和相对侧上。 公开了其它方法和结构。

公开/授权文献
信息查询
Global Dossier
Espacenet
0/0