发明申请
- 专利标题： Fin Field Effect Transistor (FINFET)
- 专利标题（中）： 鳍场效应晶体管（FinFET）
-
申请号： US13063504申请日： 2009-09-10
-
公开(公告)号： US20110169101A1公开(公告)日： 2011-07-14
- 发明人: Gerben Doornbos , Robert Lander
- 申请人： Gerben Doornbos , Robert Lander
- 优先权： EP08105356.3 20080916
- 国际申请： PCT/IB09/53963 WO 20090910
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
A Fin FET whose fin (12) has an upper portion (30) doped with a first conductivity type and a lower portion (32) doped with a second conductivity type, wherein the junction (34) between the upper portion (30) and the lower portion (32) acts as a diode; and the FinFET further comprises: at least one layer (26, 28) of high-k dielectric material (for example Si3N4) adjacent at least one side of the fin (12) for redistributing a potential drop more evenly over the diode, compared to if the at least one layer of high-k dielectric material were not present, when the upper portion (30) is connected to a first potential and the lower portion (32) is connected to a second potential thereby providing the potential drop across the junction (34). Examples of the k value for the high-k dielectric material are k≧5, k≧7.5, and k≧20.
公开/授权文献
- US08994112B2 Fin field effect transistor (finFET) 公开/授权日：2015-03-31