发明申请
- 专利标题： FABRICATION OF SUBSTRATES WITH A USEFUL LAYER OF MONOCRYSTALLINE SEMICONDUCTOR MATERIAL
- 专利标题（中）： 具有有用的单晶半导体材料层的基板的制造
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申请号： US12984895申请日： 2011-01-05
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公开(公告)号： US20110171812A1公开(公告)日： 2011-07-14
- 发明人: Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac , Pierre Rayssac , Gisèle Rayssac
- 申请人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac , Pierre Rayssac , Gisèle Rayssac
- 优先权： FR0015279 20001127; FR0207132 20020611; FR0300780 20030124
- 主分类号： H01L21/30
- IPC分类号： H01L21/30
摘要：
The invention relates to methods for fabricating a semiconductor substrate. In one embodiment, the method includes transferring a seed layer on to a support substrate; and depositing a working layer on the seed layer to form a composite substrate. The seed layer is made of a material that accommodates thermal expansion of the support substrate and of the working layer. In another embodiment, the method includes providing a source substrate with a weakened zone defining a nucleation layer, bonding a support substrate to the source substrate, detaching the nucleation layer and support substrate at the weakened zone by applying laser irradiation stress, depositing a semiconductor material upon the nucleation layer, bonding a target substrate to the deposited layer and removing the support substrate and nucleation layer. The result is a semiconductor substrate that includes the layer of semiconductor material on a support or target substrate.