公开(公告)号：US20120012048A1

公开(公告)日：2012-01-19

申请号：US13246316

申请日：2011-09-27

申请人： Fabrice Letertre ,  Bruno Ghyselen ,  Olivier Rayssac ,  Pierre Rayssac ,  Gisèle Rayssac

发明人： Fabrice Letertre ,  Bruno Ghyselen ,  Olivier Rayssac ,  Pierre Rayssac ,  Gisèle Rayssac

IPC分类号： C30B25/02 ,  C30B25/18

CPC分类号： H01L21/187 ,  H01L21/76254

摘要： The invention relates to methods for fabricating a semiconductor substrate. In one embodiment, the method includes providing an support that includes a barrier layer thereon for preventing loss by diffusion of elements derived from dissociation of the support at epitaxial growth temperatures; providing a seed layer on the barrier layer, wherein the seed layer facilitates epitaxial growth of a single crystal III-nitride semiconductor layer thereon; epitaxially growing a nitride working layer on the thin seed layer; and removing the support to form the substrate.

公开(公告)号：US20110171812A1

公开(公告)日：2011-07-14

申请号：US12984895

申请日：2011-01-05

申请人： Fabrice Letertre ,  Bruno Ghyselen ,  Olivier Rayssac ,  Pierre Rayssac ,  Gisèle Rayssac

发明人： Fabrice Letertre ,  Bruno Ghyselen ,  Olivier Rayssac ,  Pierre Rayssac ,  Gisèle Rayssac

IPC分类号： H01L21/30

CPC分类号： H01L21/187 ,  H01L21/76254

摘要： The invention relates to methods for fabricating a semiconductor substrate. In one embodiment, the method includes transferring a seed layer on to a support substrate; and depositing a working layer on the seed layer to form a composite substrate. The seed layer is made of a material that accommodates thermal expansion of the support substrate and of the working layer. In another embodiment, the method includes providing a source substrate with a weakened zone defining a nucleation layer, bonding a support substrate to the source substrate, detaching the nucleation layer and support substrate at the weakened zone by applying laser irradiation stress, depositing a semiconductor material upon the nucleation layer, bonding a target substrate to the deposited layer and removing the support substrate and nucleation layer. The result is a semiconductor substrate that includes the layer of semiconductor material on a support or target substrate.

摘要翻译： 本发明涉及制造半导体衬底的方法。 在一个实施例中，该方法包括将种子层转移到支撑衬底上; 以及在种子层上沉积工作层以形成复合衬底。 种子层由容纳支撑基板和工作层的热膨胀的材料制成。 在另一个实施例中，该方法包括：提供源极基底，其具有限定成核层的弱化区域，将支撑基底结合到源极基底，通过施加激光照射应力在弱化区域分离成核层和支撑基底，沉积半导体材料 在成核层上，将目标衬底粘合到沉积层上并去除支撑衬底和成核层。 结果是在支撑体或靶基板上包括半导体材料层的半导体衬底。

公开(公告)号：US20110039368A1

公开(公告)日：2011-02-17

申请号：US12914194

申请日：2010-10-28

申请人： Alice Boussagol ,  Bruce Faure ,  Bruno Ghyselen ,  Fabrice Letertre ,  Olivier Rayssac ,  Pierre Rayssac ,  Gisèle Rayssac

发明人： Alice Boussagol ,  Bruce Faure ,  Bruno Ghyselen ,  Fabrice Letertre ,  Olivier Rayssac ,  Pierre Rayssac ,  Gisèle Rayssac

IPC分类号： H01L31/18 ,  H01L21/30

CPC分类号： H01L21/76254 ,  C30B25/18 ,  C30B33/00 ,  H01L21/2007

摘要： A method for making substrates for use in optics, electronics, or opto-electronics. The method may include transferring a seed layer onto a receiving substrate and depositing a useful layer onto the seed layer. The thermal expansion coefficient of the receiving support may be identical to or slightly larger than the thermal expansion coefficient of the useful layer and the thermal expansion coefficient of the seed layer may be substantially equal to the thermal expansion coefficient of the receiving support. Preferably, the nucleation layer and the intermediate support have substantially the same chemical composition.

摘要翻译： 一种用于制造用于光学，电子或光电子的基板的方法。 该方法可以包括将种子层转移到接收衬底上并将有用层沉积到种子层上。 接收支撑件的热膨胀系数可以与有用层的热膨胀系数相同或略大，并且种子层的热膨胀系数可以基本上等于接收支撑件的热膨胀系数。 优选地，成核层和中间载体具有基本上相同的化学组成。

公开(公告)号：US20110233733A1

公开(公告)日：2011-09-29

申请号：US13151358

申请日：2011-06-02

申请人： Olivier Rayssac ,  Pierre Rayssac ,  Gisèle Rayssac ,  Takeshi Akatsu

发明人： Olivier Rayssac ,  Pierre Rayssac ,  Gisèle Rayssac ,  Takeshi Akatsu

IPC分类号： H01L29/06 ,  B82Y99/00

CPC分类号： H01L21/76254 ,  H01L21/76259 ,  Y10S117/915

摘要： The invention relates to a release substrate produced from semiconductor materials, and which includes a first substrate release layer having a surface in contact with a connecting layer, and a second substrate release layer having a surface in contact with the connecting layer opposite the first substrate release layer so that the connecting layer is located between the first substrate release layer and second substrate release layer; and a concentrated zone of solid nanoparticles located within the connecting layer to maintain the bonding energy of the reversible connection substantially constant even when the substrate is exposed to heat treatment while also facilitating breaking of the connecting layer by mechanical action.

摘要翻译： 本发明涉及由半导体材料制成的剥离基板，其包括具有与连接层接触的表面的第一基板剥离层和具有与连接层相对的表面与第一基板释放相反的第二基板剥离层 使得连接层位于第一基板剥离层和第二基板剥离层之间; 以及位于连接层内的固体纳米颗粒的集中区域，以便即使当衬底暴露于热处理同时还有助于通过机械作用破坏连接层时，可逆连接的结合能基本上保持不变。